isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 65A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.0195Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 100 V, 0.015 Ohm, 60 A, STripFET(TM) DeepGATE(TM) Power MOSFET in DPAK

N-channel 100 V, 0.015 廓, 60 A, STripFET??DeepGATE??Power MOSFET in TO-220, DPAK, TO-247, D2PAK

文件：974.65 Kbytes Page：18 Pages

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 69A, RDS(ON) = 11mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 15mW @VGS = 4.5V

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 69A, RDS(ON) = 11mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 15mW @VGS = 4.5V

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=70A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

Fast Switching Speed

文件：49.14 Kbytes Page：2 Pages