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70N10

Fast Switching Speed

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ISC

无锡固电

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 69A, RDS(ON) = 11mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 15mW @VGS = 4.5V

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 69A, RDS(ON) = 11mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 15mW @VGS = 4.5V

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=70A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

ISC

无锡固电

100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

更新时间:2025-8-13 11:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
国产
21+
TO-251
75
原装现货假一赔十
VBsemi
24+
TO252
9000
只做原装正品 有挂有货 假一赔十
FSC
2020+
TO220
5000
百分百原装正品 真实公司现货库存 本公司只做原装 可
ST
2511
TO-247
16900
ST
25+
TO-247
16900
原装,请咨询
CMOS/场效应半导体
23+
TO-220F
69820
终端可以免费供样,支持BOM配单!
FSC
2023+
TO3P
8700
原装现货
INFINEON
24+
TO220
5000
全新原装正品,现货销售
IR
24+
模块
3500
原装现货,可开13%税票
70N-10A
100
100

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