N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™ Power MOSFETs in TO-247 and TO-247 long leads packages

Features  Intrinsic capacitances and Qg minimized  High speed switching  100 avalanche tested Applications  Switching applications Description This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product

N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™ Power MOSFETs in TO-247 and TO-247 long leads packages

Features  Intrinsic capacitances and Qg minimized  High speed switching  100 avalanche tested Applications  Switching applications Description This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product

N沟道1700 V、7 Ohm典型值、2.6 A PowerMESH功率MOSFET，TO-247封装

MOSFET SWITCHING

MOSFET SWITCHING N-CHANNEL - ENHANCEMENT

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

N-Channel Enhancement Mode MOSFET Switch

FEATURES • Low Switching Voltages • Fast Switching Times • Low Drain-Source Resistance • Low Reverse Transfer Capacitance

N-CHANNEL MOSFET ENHANCEMENT MODE

FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds(on) ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns

an enhancement mode N-Channel Mosfet

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