isc N-Channel MOSFET Transistor

FEATURES · Drain Source Voltage : VDSS= 1700V(Min) · Static Drain-Source On-Resistance : RDS(on) = 13Ω(Max) ·100% avalanche tested DESCRIPTION ·Switching Applications

N沟道1700 V、7 Ohm典型值、2.6 A PowerMESH功率MOSFET，TO-3PF封装

This Power MOSFET is designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. • Intrinsic capacitances and Qg minimized \n• TO-3PF for higher creepage between leads \n• High speed switching \n• 100% avalanche tested;

丝印代码：3N170；N-channel 1700 V, 7 廓 typ., 2.6 A PowerMESH??Power MOSFET in a TO-3PF package

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MOSFET SWITCHING

MOSFET SWITCHING N-CHANNEL - ENHANCEMENT

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

N-Channel Enhancement Mode MOSFET Switch

FEATURES • Low Switching Voltages • Fast Switching Times • Low Drain-Source Resistance • Low Reverse Transfer Capacitance

N-CHANNEL MOSFET ENHANCEMENT MODE

FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds(on) ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns