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丝印代码:3N170;N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™ Power MOSFETs in TO-247 and TO-247 long leads packages

Features  Intrinsic capacitances and Qg minimized  High speed switching  100 avalanche tested Applications  Switching applications Description This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product

STMICROELECTRONICS

意法半导体

丝印代码:3N170;N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™ Power MOSFETs in TO-247 and TO-247 long leads packages

Features  Intrinsic capacitances and Qg minimized  High speed switching  100 avalanche tested Applications  Switching applications Description This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product

STMICROELECTRONICS

意法半导体

丝印代码:3N170;N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™ Power MOSFETs in TO-247 and TO-247 long leads packages

Features  Intrinsic capacitances and Qg minimized  High speed switching  100 avalanche tested Applications  Switching applications Description This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product

STMICROELECTRONICS

意法半导体

丝印代码:3N170;N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™ Power MOSFETs in TO-247 and TO-247 long leads packages

Features  Intrinsic capacitances and Qg minimized  High speed switching  100 avalanche tested Applications  Switching applications Description This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product

STMICROELECTRONICS

意法半导体

丝印代码:3N170;N-channel 1700 V, 7 廓 typ., 2.6 A PowerMESH??Power MOSFET in a TO-3PF package

文件:702.3 Kbytes Page:12 Pages

STMICROELECTRONICS

意法半导体

3N170

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

INTERSIL

3N170

N-Channel Enhancement Mode MOSFET Switch

FEATURES • Low Switching Voltages • Fast Switching Times • Low Drain-Source Resistance • Low Reverse Transfer Capacitance

CALOGIC

3N170

N-CHANNEL MOSFET ENHANCEMENT MODE

FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds(on) ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns

LINEAR

3N170

MOSFET SWITCHING

MOSFET SWITCHING N-CHANNEL - ENHANCEMENT

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

3N170

an enhancement mode N-Channel Mosfet

文件:278.13 Kbytes Page:1 Pages

MICROSS

3N170

MOSFETS

CALOGIC

N-CHANNEL MOSFET ENHANCEMENT MODE

FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds(on) ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns

LINEAR

N-Channel Enhancement Mode MOSFET Switch

FEATURES • Low Switching Voltages • Fast Switching Times • Low Drain-Source Resistance • Low Reverse Transfer Capacitance

CALOGIC

N-Channel Enhancement

文件:35.38 Kbytes Page:2 Pages

CALOGIC

an enhancement mode N-Channel Mosfet

文件:278.13 Kbytes Page:1 Pages

MICROSS

N-Channel Enhancement Mode MOSFET Switch

CALOGIC

3N170产品属性

  • 类型

    描述

  • Breakdown V Min:

    25

  • IGSS (pA) Max:

    ± 10

  • IDSS (nA) Max:

    10

  • VGS (V) Min:

     

  • VGS (V) Max:

     

  • RDS (on) (Ohm) Max:

    200

  • Comments:

    Low Switching Voltages

  • Channel:

    N-Channel Enhancement Mode

更新时间:2026-7-29 17:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
2020+
TO-247
880000
明嘉莱只做原装正品现货
ST/意法
26+
TO-247
43600
全新原装现货,假一赔十
ST
25+23+
TO-3P
44739
绝对原装正品全新进口深圳现货
ST/意法
22+
TO-247
9000
原装正品,支持实单!
ST
22+
TO2473
9000
原厂渠道,现货配单
STMICRO
24+
N/A
10000
只做原装,实单最低价支持
ST
25+
TO-247
18000
原装正品 有挂有货 假一赔十
ST
24+
TO-247
5000
全新原装正品,现货销售
ST(意法)
26+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST
26+
TO-220
86720
代理授权原装正品价格最实惠 本公司承诺假一赔百

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