isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 26A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.125Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 600 V, 105 m typ., 25 A, MDmeshTM M6 Power MOSFET in a TO-247 package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

N沟道600 V、0.110 Ohm典型值、24 A MDmesh DM2功率MOSFET，TO-247封装

N-channel 600 V, 0.110 廓 typ., 24 A MDmesh??DM2 Power MOSFET in D짼PAK, TO-220 and TO-247 packages

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N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages

文件：1.09215 Mbytes Page：20 Pages

N沟道600 V、0.108 Ohm典型值、26 A MDmesh M2功率MOSFET，TO-247封装

封装/外壳：TO-247-3 包装：管件 描述：MOSFET N-CH 600V TO247 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-Channel Enhancement Mode MOSFET

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E Series Power MOSFET

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EF Series Power MOSFET with Fast Body Diode

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Reduced switching and conduction losses

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iscN-Channel MOSFET Transistor

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