Extremely low gate charge and input capacitance

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N沟道600 V、0.13 Ohm典型值、21 A MDmesh DM2功率MOSFET，TO-247封装

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 21A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 160mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 600 V, 0.155 typ., 21 A MDmeshTM DM2 Power MOSFET in a PowerFLATTM 8x8 HV package

Features  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100 avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode seri

Extremely low gate charge and input capacitance

文件：1.11965 Mbytes Page：20 Pages

N-channel 600 V, 0.13 廓 typ., 21 A MDmesh??DM2 Power MOSFET in a TO-220FP package

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Extremely low gate charge and input capacitance

文件：1.11965 Mbytes Page：20 Pages