Ultrafast recovery diode

Description The STTH8R04 series uses STs new 400 V planar Pt doping technology. The STTH8R04 is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverter

Ultrafast Recovery Diode

FEATURES · High thermal cycling performance · Low on-state losses · Low thermal resistance · Soft recovery characteristic APPLICATIONS · Very low switching losses · High frequency and high pulsed current operation · High junction temperature

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR） 描述：DIODE GEN PURP 400V 8A D2PAK 分立半导体产品 二极管 - 整流器 - 单

Ultrafast recovery diode

Description The STTH8R04 series uses STs new 400 V planar Pt doping technology. The STTH8R04 is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverter

Ultrafast recovery diode

Description The STTH8R04 series uses STs new 400 V planar Pt doping technology. The STTH8R04 is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverter

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE GEN PURP 400V 8A D2PAK 分立半导体产品 二极管 - 整流器 - 单

Ultrafast recovery diode

Description The STTH8R04 series uses STs new 400 V planar Pt doping technology. The STTH8R04 is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverter

Ultrafast recovery diode

Description The STTH8R04 series uses STs new 400 V planar Pt doping technology. The STTH8R04 is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverter

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 49A, RDS (ON) = 7.8mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Pb-free lead plating ; RoHS compliant. Halogen Free. RDS(ON) = 12mW @VGS = 4.5V.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 47A, RDS(ON) = 7.4mW @VGS = 10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RDS(ON) = 12mW @VGS = 4.5V. Pb-free lead plating ; RoHS compliant. Halogen Free.