N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 47A, RDS(ON) = 7.4mW @VGS = 10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RDS(ON) = 12mW @VGS = 4.5V. Pb-free lead plating ; RoHS compliant. Halogen Free.

N Channel Product

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 49A, RDS (ON) = 7.8mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Pb-free lead plating ; RoHS compliant. Halogen Free. RDS(ON) = 12mW @VGS = 4.5V.

Ultrafast recovery diode

Description The STTH8R04 series uses STs new 400 V planar Pt doping technology. The STTH8R04 is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverter

Ultrafast recovery diode

Description The STTH8R04 series uses STs new 400 V planar Pt doping technology. The STTH8R04 is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverter

Ultrafast recovery diode

Description The STTH8R04 series uses STs new 400 V planar Pt doping technology. The STTH8R04 is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverter