STTH8R04G-TR价格

参考价格:¥3.1622

型号:STTH8R04G-TR 品牌:STMicroelectronics 备注:这里有STTH8R04G-TR多少钱,2025年最近7天走势,今日出价,今日竞价,STTH8R04G-TR批发/采购报价,STTH8R04G-TR行情走势销售排行榜,STTH8R04G-TR报价。
型号 功能描述 生产厂家&企业 LOGO 操作
STTH8R04G-TR

Ultrafast recovery diode

Description The STTH8R04 series uses STs new 400 V planar Pt doping technology. The STTH8R04 is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverter

STMICROELECTRONICS

意法半导体

STTH8R04G-TR

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:DIODE GEN PURP 400V 8A D2PAK 分立半导体产品 二极管 - 整流器 - 单

STMICROELECTRONICS

意法半导体

Ultrafast recovery diode

Description The STTH8R04 series uses STs new 400 V planar Pt doping technology. The STTH8R04 is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverter

STMICROELECTRONICS

意法半导体

Ultrafast recovery diode

Description The STTH8R04 series uses STs new 400 V planar Pt doping technology. The STTH8R04 is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverter

STMICROELECTRONICS

意法半导体

Ultrafast recovery diode

Description The STTH8R04 series uses STs new 400 V planar Pt doping technology. The STTH8R04 is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverter

STMICROELECTRONICS

意法半导体

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 49A, RDS (ON) = 7.8mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Pb-free lead plating ; RoHS compliant. Halogen Free. RDS(ON) = 12mW @VGS = 4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 47A, RDS(ON) = 7.4mW @VGS = 10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RDS(ON) = 12mW @VGS = 4.5V. Pb-free lead plating ; RoHS compliant. Halogen Free.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

STTH8R04G-TR产品属性

  • 类型

    描述

  • 型号

    STTH8R04G-TR

  • 功能描述

    整流器 Recovery Diode Ultra Fast

  • RoHS

  • 制造商

    Vishay Semiconductors

  • 产品

    Standard Recovery Rectifiers

  • 反向电压

    100 V

  • 恢复时间

    1.2 us

  • 正向连续电流

    2 A

  • 最大浪涌电流

    35 A 反向电流

  • IR

    5 uA

  • 安装风格

    SMD/SMT

  • 封装/箱体

    DO-221AC

  • 封装

    Reel

更新时间:2025-8-15 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST(意法半导体)
24+
D2PAK
5768
百分百原装正品,可原型号开票
ST/意法半导体
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
ST
13+
TO-263
655
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST/意法
17+
TO-263
1999
ST/意法半导体
21+
TO-263-2
10000
全新原装现货
ST/意法
23+
TO-263
30000
全新原装现货,价格优势
ST/意法半导体
25+
原厂封装
9999
ST/意法半导体
21+
TO-263-2
10000
只做原装,质量保证
ST
1651+
?
7500
只做原装进口,假一罚十
ST/意法
24+
TO-263
1999
只做原厂渠道 可追溯货源

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