STTH8R04价格

参考价格:¥2.7258

型号:STTH8R04D 品牌:STMicroelectronics 备注:这里有STTH8R04多少钱,2025年最近7天走势,今日出价,今日竞价,STTH8R04批发/采购报价,STTH8R04行情走势销售排行榜,STTH8R04报价。
型号 功能描述 生产厂家&企业 LOGO 操作
STTH8R04

Ultrafast recovery diode

Description The STTH8R04 series uses STs new 400 V planar Pt doping technology. The STTH8R04 is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverter

STMICROELECTRONICS

意法半导体

Ultrafast recovery diode

Description The STTH8R04 series uses STs new 400 V planar Pt doping technology. The STTH8R04 is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverter

STMICROELECTRONICS

意法半导体

Ultrafast recovery diode

Description The STTH8R04 series uses STs new 400 V planar Pt doping technology. The STTH8R04 is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverter

STMICROELECTRONICS

意法半导体

Ultrafast recovery diode

Description The STTH8R04 series uses STs new 400 V planar Pt doping technology. The STTH8R04 is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverter

STMICROELECTRONICS

意法半导体

Ultrafast recovery diode

Description The STTH8R04 series uses STs new 400 V planar Pt doping technology. The STTH8R04 is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverter

STMICROELECTRONICS

意法半导体

Ultrafast Recovery Diode

FEATURES · High thermal cycling performance · Low on-state losses · Low thermal resistance · Soft recovery characteristic APPLICATIONS · Very low switching losses · High frequency and high pulsed current operation · High junction temperature

ISC

无锡固电

Ultrafast recovery diode

Description The STTH8R04 series uses STs new 400 V planar Pt doping technology. The STTH8R04 is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverter

STMICROELECTRONICS

意法半导体

封装/外壳:TO-220-2 绝缘,TO-220AC 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE GEN PURP 400V 8A TO220AC 分立半导体产品 二极管 - 整流器 - 单

STMICROELECTRONICS

意法半导体

封装/外壳:TO-220-2 全封装,隔离接片 包装:卷带(TR) 描述:DIODE GEN PURP 400V 8A TO220FP 分立半导体产品 二极管 - 整流器 - 单

STMICROELECTRONICS

意法半导体

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 49A, RDS (ON) = 7.8mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Pb-free lead plating ; RoHS compliant. Halogen Free. RDS(ON) = 12mW @VGS = 4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 47A, RDS(ON) = 7.4mW @VGS = 10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RDS(ON) = 12mW @VGS = 4.5V. Pb-free lead plating ; RoHS compliant. Halogen Free.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

STTH8R04产品属性

  • 类型

    描述

  • 型号

    STTH8R04

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    Ultrafast recovery diode

更新时间:2025-8-14 17:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
17+
TO-263
1999
ST/意法半导体
23+
TO-220-2
12700
买原装认准中赛美
ST/意法半导体
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST
25+
TO-220
16900
原装,请咨询
ST/意法半导体
21+
TO-220-2
8860
原装现货,实单价优
ST
24+
TO-220
1000
原装现货热卖
ST
25+23+
TO220
36647
绝对原装正品全新进口深圳现货
ST/意法
23+
TO-263
30000
全新原装现货,价格优势
ST/意法半导体
21+
TO-220-2
8860
只做原装,质量保证

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