Low forward and reverse recovery time

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200 V、8 A双超高速二极管

HIGH EFFICIENCY ULTRAFAST DIODE

DESCRIPTION Dual center tap rectifier suited for Switch Mode Power Supplies and High frequency DC to DC converters. Packaged in DPAK, TO-220AB or TO-220FPAB. This device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. FEATURES AN

HIGH EFFICIENCY ULTRAFAST DIODE

DESCRIPTION Dual center tap rectifier suited for Switch Mode Power Supplies and High frequency DC to DC converters. Packaged in DPAK, TO-220AB or TO-220FPAB. This device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. FEATURES AN

HIGH EFFICIENCY ULTRAFAST DIODE

DESCRIPTION Dual center tap rectifier suited for Switch Mode Power Supplies and High frequency DC to DC converters. Packaged in DPAK, TO-220AB or TO-220FPAB. This device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. FEATURES AN

HIGH EFFICIENCY ULTRAFAST DIODE

DESCRIPTION Dual center tap rectifier suited for Switch Mode Power Supplies and High frequency DC to DC converters. Packaged in DPAK, TO-220AB or TO-220FPAB. This device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. FEATURES AN

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY GP 200V 4A DPAK 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：TO-220-3 整包 包装：卷带（TR） 描述：DIODE ARRAY GP 200V 4A TO220FP 分立半导体产品 二极管 - 整流器 - 阵列

Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is complementary with BD 795, 797, 799, 801

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

High−Power NPN Silicon Transistor • • • for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat