Miniature 16pin SOIC package

APPLICATIONS • Telecom switching • PCMCIA cards • Fax/modem modules • Set-top boxes • DAA arrangements • Hookswitch • Loop current detect • Pulse dialing FEATURES • Miniature 16pin SOIC package Function integration (1 relay, 1 optocoupler,bridge rectifier • High Blocking Voltage (400

Miniature 16pin SOIC package

APPLICATIONS • Telecom switching • PCMCIA cards • Fax/modem modules • Set-top boxes • DAA arrangements • Hookswitch • Loop current detect • Pulse dialing FEATURES • Miniature 16pin SOIC package • Function integration, including Zener Diode protection • High Blocking Voltage (400V, re

PNP Silicon Transistor

Description • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=-0.3V [IC=-20mA, IB=-2mA] • Low output capacitance : Cob=2.8pF(Typ.) • Complementary pair with STS5343

N-CHANNEL 30V - 0.018 ohm - 7A SO-8 P-CHANNEL 30V - 0.070 ohm - 4A SO-8 STripFET??POWER MOSFET

N-CHANNEL 30V - 0.018 Ω - 7A SO-8 P-CHANNEL 30V - 0.070 Ω - 4A SO-8 This Power MOSFET is the latest development of STMicroelectronis unique ”Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalan

N - CHANNEL 30V - 0.021ohm - 7A SO-8 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

N-CHANNEL 60V - 0.017 ohm - 7.5A SO-8 STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation • 100 Rg and UIS Tested APPLICATIONS • CCFL Inverter

N-Channel Enhancement Mode Power MOSFET

General Features | © Vos =60VIo 7A | Rosin

P-CHANNEL 30V - 0.016ohm - 7A SO-8 STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics’ unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing densisty for low on-resistance, rugged avalanche characteristics and less critical alignment steps, therefore a

Surface Mount Process Sealed Tactile

文件：264.93 Kbytes Page：2 Pages

Surface Mount Process Sealed Tactile

文件：264.93 Kbytes Page：2 Pages

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IP67 SURFACE MOUNT GULL WING TAC 开关 触摸开关

轻触开关

Specialty Products

Multifunction Telecommunications Switch

文件：154.75 Kbytes Page：5 Pages

Telecommunications Switch

文件：448.2 Kbytes Page：8 Pages

Specialty Products

PNP Silicon Transistor

文件：262.31 Kbytes Page：4 Pages

Multifunction Telecommunications Switch

文件：143.47 Kbytes Page：5 Pages

Multifunction Telecommunications Switch

文件：144.08 Kbytes Page：5 Pages

N- and P-Channel 30 V (D-S) MOSFET

文件：1.13459 Mbytes Page：14 Pages

DUAL N - CHANNEL 30V - 0.018ohm - 7A SO-8 STripFET POWER MOSFET

文件：46.48 Kbytes Page：6 Pages

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH 30V 17A 8SOIC 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-Channel MOSFET uses advanced trench technology

文件：1.41129 Mbytes Page：5 Pages

High avalanche ruggedness

文件：396.46 Kbytes Page：13 Pages

P-CHANNEL 30V - 0.16廓 - 7A - SO-8 STripFET??II Power MOSFET

文件：234.2 Kbytes Page：11 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.00475 Mbytes Page：9 Pages

P-Channel MOSFET uses advanced trench technology

文件：1.16633 Mbytes Page：4 Pages

P-CHANNEL 30V - 0.16廓 - 7A - SO-8 STripFET??II Power MOSFET

文件：234.2 Kbytes Page：11 Pages