N-CHANNEL 30V - 0.018 Ω - 7A SO-8

P-CHANNEL 30V - 0.070 Ω - 4A SO-8

This Power MOSFET is the latest development of STMicroelectronis unique ”Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark able manufacturing reproducibility.

• TYPICAL RDS(on) (N-Channel) = 0.018Ω

• TYPICAL RDS(on) (P-Channel) = 0.070Ω

• STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY

• LOW THRESHOLD DRIVE