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STS3价格

参考价格:¥0.5850

型号:STS3401 品牌:SAMHOP 备注:这里有STS3多少钱,2026年最近7天走势,今日出价,今日竞价,STS3批发/采购报价,STS3行情走势销售排行榜,STS3报价。
型号 功能描述 生产厂家 企业 LOGO 操作

±0.2°C数字温度传感器 (0-65°C)

STS3x是Sensirion的最新高精度数字温度传感器系列。STS3x温度传感器利用行业认证的CMOSens® 技术,以其改善的智能化、可靠性和提升的精度赢得了用户。\n\nSensirion新的STS3x温度传感器的功能包括增强的信号处理、两个特色和用户可选I2C地址,以及高达1 MHz的通信频率。DFN封装表面面积为2.5 × 2.5 mm²,同时保留了0.9 mm的高度,这使得STS3x系列易于集成到各种应用。此外,2.15至5.5 V的宽电源电压范围和低电流消耗(每秒测量1次情况下,平均电流2µA)可保证其兼容广泛的应用。\n\nSTS3x温度传感器提供了一个完全校准、线性和供电电压

SENSIRION

盛思锐

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

VBSEMI

微碧半导体

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

SAMHOP

三合微科

3th Generation, High-Reliability, Certified Digital Temperature Sensor

Features • Accuracy ±0.4 °C • VDD = 2.15 V … 5.5 V • Low drift,

SENSIRION

盛思锐

I-Line Low Capacitance Bi-directional TVS Diode

Features + 350W peak pulse power (8/205) + Low operating :8V «Ultra low capacitance: 1.0 pF typical | + Ultra low leakage: nA leel + Low clamping voltage + Protects one power line or data line + Complies with following standards: « —IEC 61000-4-2 (ESD) immunity test | Air discharge: £30

TECHPUBLIC

台舟电子

3th Generation, High-Reliability, Certified Digital Temperature Sensor

Features • Accuracy ±0.4 °C • VDD = 2.15 V … 5.5 V • Low drift,

SENSIRION

盛思锐

3th Generation, High-Reliability, Certified Digital Temperature Sensor

Features • Accuracy ±0.4 °C • VDD = 2.15 V … 5.5 V • Low drift,

SENSIRION

盛思锐

3th Generation, High-Reliability, Certified Digital Temperature Sensor

Features • Accuracy ±0.4 °C • VDD = 2.15 V … 5.5 V • Low drift,

SENSIRION

盛思锐

3th Generation, High-Reliability, Certified Digital Temperature Sensor

Features • Accuracy ±0.4 °C • VDD = 2.15 V … 5.5 V • Low drift,

SENSIRION

盛思锐

3th Generation, High-Reliability, Certified Digital Temperature Sensor

Features • Accuracy ±0.4 °C • VDD = 2.15 V … 5.5 V • Low drift,

SENSIRION

盛思锐

3th Generation, High-Reliability, Certified Digital Temperature Sensor

Features • Accuracy ±0.4 °C • VDD = 2.15 V … 5.5 V • Low drift,

SENSIRION

盛思锐

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

VBSEMI

微碧半导体

N-Channel E nhancement Mode F ield E ffect Trans is tor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

SAMHOP

三合微科

P-Channel E nhancement Mode MOSFET

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

SAMHOP

三合微科

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

SAMHOP

三合微科

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

SAMHOP

三合微科

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

VBSEMI

微碧半导体

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

P-Channel E nhancement Mode MOSFET

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 Package.

SAMHOP

三合微科

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

SAMHOP

三合微科

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

VBSEMI

微碧半导体

P-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

SAMHOP

三合微科

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

SAMHOP

三合微科

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

SAMHOP

三合微科

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

VBSEMI

微碧半导体

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

SAMHOP

三合微科

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

SAMHOP

三合微科

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

SAMHOP

三合微科

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

VBSEMI

微碧半导体

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

SAMHOP

三合微科

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

SAMHOP

三合微科

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

SAMHOP

三合微科

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

SAMHOP

三合微科

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

SAMHOP

三合微科

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

VBSEMI

微碧半导体

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

SAMHOP

三合微科

Dual E nhancement Mode F ield E ffect Transistor ( N and P Channel)

Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

SAMHOP

三合微科

N- and P-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

VBSEMI

微碧半导体

Dual N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

VBSEMI

微碧半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-26 package.

SAMHOP

三合微科

Dual N-Channel Enhancement Mode Field E ffect Trans is tor

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

SAMHOP

三合微科

Dual N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

VBSEMI

微碧半导体

N-CHANNEL 30V - 0.050 ohm - 3.5A SO-8 P-CHANNEL 30V - 0.140 ohm - 3A SO-8 STripFET??II POWER MOSFET

DESCRIPTION This application specific Power MOSFET is the second generation of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps

STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.065ohm - 3A SO-8 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

STMICROELECTRONICS

意法半导体

N - CHANNEL 30V - 0.055ohm - 3.5A - SO-8 PowerMESH MOSFET

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

STMICROELECTRONICS

意法半导体

DUAL P-CHANNEL 20V - 0.090 ohm - 3A SO-8 STripFET??POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

STMICROELECTRONICS

意法半导体

DUAL P - CHANNEL 30V - 0.145ohm - 3A SO-8 STripFETO POWER MOSFET

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

STMICROELECTRONICS

意法半导体

P - CHANNEL 30V - 0.065ohm - 3A - S0-8 STripFETO MOSFET PLUS SCHOTTKY RECTIFIER

DESCRIPTION: This product associates the latest low voltage StripFET™ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.

STMICROELECTRONICS

意法半导体

P - CHANNEL 30V - 0.13ohm - 3A S0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER

DESCRIPTION: This product associates the latest low voltage StripFET™ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.

STMICROELECTRONICS

意法半导体

P-CHANNEL 40V - 0.070ohm - 3A SO-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER

DESCRIPTION This product associates the latest low voltage STripFET™ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.

STMICROELECTRONICS

意法半导体

P-CHANNEL 45V - 0.080 ohm - 3A SO-8 STripFET??MOSFET PLUS SCHOTTKY RECTIFIER

DESCRIPTION This product associates the latest low voltage StripFETœ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.

STMICROELECTRONICS

意法半导体

Fully calibrated and linearized digital output

文件:886.78 Kbytes Page:17 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

封装/外壳:8-VFDFN 裸露焊盘 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:AUTOMOTIVE SENSOR DIGITAL 0C-65C 传感器,变送器 温度传感器 - 模拟和数字输出

SENSIRION

盛思锐

Fully calibrated and linearized digital output

文件:886.78 Kbytes Page:17 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Fully calibrated and linearized digital output

文件:886.78 Kbytes Page:17 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

STS3产品属性

  • 类型

    描述

  • 峰值脉冲功率(Ppp)@10/1000us:

    350W

  • 通道数:

    单路

  • 工作温度:

    -55℃~+125℃@(Tj)

  • 类型:

    ESD

更新时间:2026-5-15 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMHOP
2016+
SOT23-3
9000
只做原装,假一罚十,公司可开17%增值税发票!
VBsemi/台湾微碧
22+
SOT-23
20000
公司只做原装 品质保障
SAMHOP
25+
SOT-23
4500
全新原装、诚信经营、公司现货销售!
SAMHOP/三合微科
25+
SOT-23
45409
SAMHOP/三合微科全新特价STS3401即刻询购立享优惠#长期有货
SAMHOP/三合微科
23+
SOT-23
50000
原装正品 支持实单
SAMHOP/三合微科
新年份
SOT-23
3250
原装正品大量现货,要多可发货,实单带接受价来谈!
SAMHOP
21+
SOT23
10065
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SAMHOP
16+
SOT-23
3250
进口原装现货/价格优势!
SAMHOP
25+
SOT23
15000
全新原装现货,价格优势
三合/SAMHOP
24+
SOT23-3
26970
郑重承诺只做原装进口现货

STS3数据表相关新闻