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STS3价格
参考价格:¥0.5850
型号:STS3401 品牌:SAMHOP 备注:这里有STS3多少钱,2025年最近7天走势,今日出价,今日竞价,STS3批发/采购报价,STS3行情走势销售排行榜,STS3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Super high dense cell design for low RDS(ON). STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N | Samhop 三合微科 | |||
N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter | VBSEMI 微碧半导体 | |||
3th Generation, High-Reliability, Certified Digital Temperature Sensor Features • Accuracy ±0.4 °C • VDD = 2.15 V … 5.5 V • Low drift, | Sensirion 盛思锐 | |||
I-Line Low Capacitance Bi-directional TVS Diode Features + 350W peak pulse power (8/205) + Low operating :8V «Ultra low capacitance: 1.0 pF typical | + Ultra low leakage: nA leel + Low clamping voltage + Protects one power line or data line + Complies with following standards: « —IEC 61000-4-2 (ESD) immunity test | Air discharge: £30 | TECHPUBLIC 台舟电子 | |||
3th Generation, High-Reliability, Certified Digital Temperature Sensor Features • Accuracy ±0.4 °C • VDD = 2.15 V … 5.5 V • Low drift, | Sensirion 盛思锐 | |||
3th Generation, High-Reliability, Certified Digital Temperature Sensor Features • Accuracy ±0.4 °C • VDD = 2.15 V … 5.5 V • Low drift, | Sensirion 盛思锐 | |||
3th Generation, High-Reliability, Certified Digital Temperature Sensor Features • Accuracy ±0.4 °C • VDD = 2.15 V … 5.5 V • Low drift, | Sensirion 盛思锐 | |||
3th Generation, High-Reliability, Certified Digital Temperature Sensor Features • Accuracy ±0.4 °C • VDD = 2.15 V … 5.5 V • Low drift, | Sensirion 盛思锐 | |||
3th Generation, High-Reliability, Certified Digital Temperature Sensor Features • Accuracy ±0.4 °C • VDD = 2.15 V … 5.5 V • Low drift, | Sensirion 盛思锐 | |||
3th Generation, High-Reliability, Certified Digital Temperature Sensor Features • Accuracy ±0.4 °C • VDD = 2.15 V … 5.5 V • Low drift, | Sensirion 盛思锐 | |||
N-Channel E nhancement Mode F ield E ffect Trans is tor FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package. | Samhop 三合微科 | |||
N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter | VBSEMI 微碧半导体 | |||
P-Channel E nhancement Mode MOSFET STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N | Samhop 三合微科 | |||
P-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter | VBSEMI 微碧半导体 | |||
Super high dense cell design for low RDS(ON). STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N | Samhop 三合微科 | |||
P-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter | VBSEMI 微碧半导体 | |||
N-Channel E nhancement Mode Field Effect Transistor FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package. | Samhop 三合微科 | |||
N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter | VBSEMI 微碧半导体 | |||
P-Channel E nhancement Mode MOSFET FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 Package. | Samhop 三合微科 | |||
P-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter | VBSEMI 微碧半导体 | |||
N-Channel E nhancement Mode Field Effect Transistor FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package. | Samhop 三合微科 | |||
N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter | VBSEMI 微碧半导体 | |||
P-Channel E nhancement Mode Field Effect Transistor FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package. | Samhop 三合微科 | |||
Super high dense cell design for low RDS(ON). STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N | Samhop 三合微科 | |||
Super high dense cell design for low RDS(ON). STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N | Samhop 三合微科 | |||
P-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter | VBSEMI 微碧半导体 | |||
Super high dense cell design for low RDS(ON). STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N | Samhop 三合微科 | |||
P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters | VBSEMI 微碧半导体 | |||
Super high dense cell design for low RDS(ON). STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N | Samhop 三合微科 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package. | Samhop 三合微科 | |||
N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter | VBSEMI 微碧半导体 | |||
Super high dense cell design for low RDS(ON). STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N | Samhop 三合微科 | |||
Super high dense cell design for low RDS(ON). STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N | Samhop 三合微科 | |||
P-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter | VBSEMI 微碧半导体 | |||
Super high dense cell design for low RDS(ON). STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N | Samhop 三合微科 | |||
P-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter | VBSEMI 微碧半导体 | |||
Super high dense cell design for low RDS(ON). STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N | Samhop 三合微科 | |||
Super high dense cell design for low RDS(ON). STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N | Samhop 三合微科 | |||
N-Channel 30 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching | VBSEMI 微碧半导体 | |||
Super high dense cell design for low RDS(ON). STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N | Samhop 三合微科 | |||
Dual E nhancement Mode F ield E ffect Transistor ( N and P Channel) Dual Enhancement Mode Field Effect Transistor ( N and P Channel) | Samhop 三合微科 | |||
N- and P-Channel 20V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC | VBSEMI 微碧半导体 | |||
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-26 package. | Samhop 三合微科 | |||
Dual N-Channel 20 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC | VBSEMI 微碧半导体 | |||
Dual N-Channel Enhancement Mode Field E ffect Trans is tor STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N | Samhop 三合微科 | |||
Dual N-Channel 20 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC | VBSEMI 微碧半导体 | |||
N-CHANNEL 30V - 0.050 ohm - 3.5A SO-8 P-CHANNEL 30V - 0.140 ohm - 3A SO-8 STripFET??II POWER MOSFET DESCRIPTION This application specific Power MOSFET is the second generation of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps | STMICROELECTRONICS 意法半导体 | |||
N - CHANNEL 60V - 0.065ohm - 3A SO-8 STripFET POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema | STMICROELECTRONICS 意法半导体 | |||
N - CHANNEL 30V - 0.055ohm - 3.5A - SO-8 PowerMESH MOSFET DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka | STMICROELECTRONICS 意法半导体 | |||
DUAL P-CHANNEL 20V - 0.090 ohm - 3A SO-8 STripFET??POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab | STMICROELECTRONICS 意法半导体 | |||
DUAL P - CHANNEL 30V - 0.145ohm - 3A SO-8 STripFETO POWER MOSFET DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark | STMICROELECTRONICS 意法半导体 | |||
P - CHANNEL 30V - 0.065ohm - 3A - S0-8 STripFETO MOSFET PLUS SCHOTTKY RECTIFIER DESCRIPTION: This product associates the latest low voltage StripFET™ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. | STMICROELECTRONICS 意法半导体 | |||
P - CHANNEL 30V - 0.13ohm - 3A S0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER DESCRIPTION: This product associates the latest low voltage StripFET™ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. | STMICROELECTRONICS 意法半导体 | |||
P-CHANNEL 40V - 0.070ohm - 3A SO-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER DESCRIPTION This product associates the latest low voltage STripFET™ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. | STMICROELECTRONICS 意法半导体 | |||
P-CHANNEL 45V - 0.080 ohm - 3A SO-8 STripFET??MOSFET PLUS SCHOTTKY RECTIFIER DESCRIPTION This product associates the latest low voltage StripFETœ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. | STMICROELECTRONICS 意法半导体 | |||
Fully calibrated and linearized digital output 文件:886.78 Kbytes Page:17 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
封装/外壳:8-VFDFN 裸露焊盘 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:AUTOMOTIVE SENSOR DIGITAL 0C-65C 传感器,变送器 温度传感器 - 模拟和数字输出 | Sensirion 盛思锐 | |||
±0.2°C数字温度传感器 (0-65°C) | Sensirion 盛思锐 | |||
Fully calibrated and linearized digital output 文件:886.78 Kbytes Page:17 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Fully calibrated and linearized digital output 文件:886.78 Kbytes Page:17 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |
STS3产品属性
- 类型
描述
- 型号
STS3
- 制造商
Bourns Inc
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SENSIRION |
24+ |
DFN |
39500 |
进口原装现货 支持实单价优 |
|||
Sensirion(瑞士盛思锐) |
2447 |
DFN-8 |
115000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
sensirion |
25+ |
DFN-8 |
6000 |
原厂原装 欢迎询价 |
|||
sensirion |
21+ |
DFN-8 |
10000 |
只做原装,质量保证 |
|||
TI |
25+ |
原封装 |
66330 |
郑重承诺只做原装进口现货 |
|||
sensirion |
24+ |
DFN-8 |
12800 |
原装正品现货支持实单 |
|||
sensirion |
23+ |
DFN-8 |
12800 |
正规渠道,只有原装! |
|||
sensirion |
24+ |
DFN-8 |
30000 |
原装正品公司现货,假一赔十! |
|||
sensirion |
24+ |
DFN-8 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
Sensirion |
24+ |
NA |
3000 |
进口原装正品优势供应 |
STS3规格书下载地址
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