STS3价格

参考价格:¥0.5850

型号:STS3401 品牌:SAMHOP 备注:这里有STS3多少钱,2025年最近7天走势,今日出价,今日竞价,STS3批发/采购报价,STS3行情走势销售排行榜,STS3报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

Samhop

三合微科

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

VBSEMI

微碧半导体

3th Generation, High-Reliability, Certified Digital Temperature Sensor

Features • Accuracy ±0.4 °C • VDD = 2.15 V … 5.5 V • Low drift,

Sensirion

盛思锐

I-Line Low Capacitance Bi-directional TVS Diode

Features + 350W peak pulse power (8/205) + Low operating :8V «Ultra low capacitance: 1.0 pF typical | + Ultra low leakage: nA leel + Low clamping voltage + Protects one power line or data line + Complies with following standards: « —IEC 61000-4-2 (ESD) immunity test | Air discharge: £30

TECHPUBLIC

台舟电子

3th Generation, High-Reliability, Certified Digital Temperature Sensor

Features • Accuracy ±0.4 °C • VDD = 2.15 V … 5.5 V • Low drift,

Sensirion

盛思锐

3th Generation, High-Reliability, Certified Digital Temperature Sensor

Features • Accuracy ±0.4 °C • VDD = 2.15 V … 5.5 V • Low drift,

Sensirion

盛思锐

3th Generation, High-Reliability, Certified Digital Temperature Sensor

Features • Accuracy ±0.4 °C • VDD = 2.15 V … 5.5 V • Low drift,

Sensirion

盛思锐

3th Generation, High-Reliability, Certified Digital Temperature Sensor

Features • Accuracy ±0.4 °C • VDD = 2.15 V … 5.5 V • Low drift,

Sensirion

盛思锐

3th Generation, High-Reliability, Certified Digital Temperature Sensor

Features • Accuracy ±0.4 °C • VDD = 2.15 V … 5.5 V • Low drift,

Sensirion

盛思锐

3th Generation, High-Reliability, Certified Digital Temperature Sensor

Features • Accuracy ±0.4 °C • VDD = 2.15 V … 5.5 V • Low drift,

Sensirion

盛思锐

N-Channel E nhancement Mode F ield E ffect Trans is tor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

Samhop

三合微科

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

VBSEMI

微碧半导体

P-Channel E nhancement Mode MOSFET

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

Samhop

三合微科

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

Samhop

三合微科

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

Samhop

三合微科

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

VBSEMI

微碧半导体

P-Channel E nhancement Mode MOSFET

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 Package.

Samhop

三合微科

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

Samhop

三合微科

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

VBSEMI

微碧半导体

P-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

Samhop

三合微科

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

Samhop

三合微科

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

Samhop

三合微科

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

Samhop

三合微科

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

VBSEMI

微碧半导体

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

Samhop

三合微科

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

Samhop

三合微科

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

VBSEMI

微碧半导体

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

Samhop

三合微科

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

Samhop

三合微科

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

Samhop

三合微科

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

Samhop

三合微科

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

Samhop

三合微科

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

VBSEMI

微碧半导体

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

Samhop

三合微科

Dual E nhancement Mode F ield E ffect Transistor ( N and P Channel)

Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

Samhop

三合微科

N- and P-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

VBSEMI

微碧半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-26 package.

Samhop

三合微科

Dual N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

VBSEMI

微碧半导体

Dual N-Channel Enhancement Mode Field E ffect Trans is tor

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

Samhop

三合微科

Dual N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

VBSEMI

微碧半导体

N-CHANNEL 30V - 0.050 ohm - 3.5A SO-8 P-CHANNEL 30V - 0.140 ohm - 3A SO-8 STripFET??II POWER MOSFET

DESCRIPTION This application specific Power MOSFET is the second generation of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps

STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.065ohm - 3A SO-8 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

STMICROELECTRONICS

意法半导体

N - CHANNEL 30V - 0.055ohm - 3.5A - SO-8 PowerMESH MOSFET

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

STMICROELECTRONICS

意法半导体

DUAL P-CHANNEL 20V - 0.090 ohm - 3A SO-8 STripFET??POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

STMICROELECTRONICS

意法半导体

DUAL P - CHANNEL 30V - 0.145ohm - 3A SO-8 STripFETO POWER MOSFET

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

STMICROELECTRONICS

意法半导体

P - CHANNEL 30V - 0.065ohm - 3A - S0-8 STripFETO MOSFET PLUS SCHOTTKY RECTIFIER

DESCRIPTION: This product associates the latest low voltage StripFET™ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.

STMICROELECTRONICS

意法半导体

P - CHANNEL 30V - 0.13ohm - 3A S0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER

DESCRIPTION: This product associates the latest low voltage StripFET™ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.

STMICROELECTRONICS

意法半导体

P-CHANNEL 40V - 0.070ohm - 3A SO-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER

DESCRIPTION This product associates the latest low voltage STripFET™ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.

STMICROELECTRONICS

意法半导体

P-CHANNEL 45V - 0.080 ohm - 3A SO-8 STripFET??MOSFET PLUS SCHOTTKY RECTIFIER

DESCRIPTION This product associates the latest low voltage StripFETœ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.

STMICROELECTRONICS

意法半导体

Fully calibrated and linearized digital output

文件:886.78 Kbytes Page:17 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

封装/外壳:8-VFDFN 裸露焊盘 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:AUTOMOTIVE SENSOR DIGITAL 0C-65C 传感器,变送器 温度传感器 - 模拟和数字输出

Sensirion

盛思锐

±0.2°C数字温度传感器 (0-65°C)

Sensirion

盛思锐

Fully calibrated and linearized digital output

文件:886.78 Kbytes Page:17 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Fully calibrated and linearized digital output

文件:886.78 Kbytes Page:17 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

STS3产品属性

  • 类型

    描述

  • 型号

    STS3

  • 制造商

    Bourns Inc

更新时间:2025-12-16 15:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SENSIRION
24+
DFN
39500
进口原装现货 支持实单价优
Sensirion(瑞士盛思锐)
2447
DFN-8
115000
2500个/圆盘一级代理专营品牌!原装正品,优势现货,
sensirion
25+
DFN-8
6000
原厂原装 欢迎询价
sensirion
21+
DFN-8
10000
只做原装,质量保证
TI
25+
原封装
66330
郑重承诺只做原装进口现货
sensirion
24+
DFN-8
12800
原装正品现货支持实单
sensirion
23+
DFN-8
12800
正规渠道,只有原装!
sensirion
24+
DFN-8
30000
原装正品公司现货,假一赔十!
sensirion
24+
DFN-8
6000
全新原装深圳仓库现货有单必成
Sensirion
24+
NA
3000
进口原装正品优势供应

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