Dual E nhancement Mode F ield E ffect Transistor ( N and P Channel)

Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

N- and P-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

Mosfets

Fingerprint Sensor

Description The CXA3621GE is an electrostatic capacitance method fingerprint sensor. This monolithic IC integrates the sensor block, sense amplifier (3-bit gain adjustment), sample-andhold, output amplifier and output buffer needed to acquire fingerprint images, as well as the timing generator f

For Switching Power Supply Control

■ Description FA3621F is a control IC for 6-channel DC-DC converter. This IC can directly drive a Nch/Pch-MOSFET. This IC is suitable to reduce converter size because it has many functions in a small package LQFP-48. ■ Features • 6-channel PWM control with MOSFET direct driving : 5-channel for

For Switching Power Supply Control

■ Description FA3621F is a control IC for 6-channel DC-DC converter. This IC can directly drive a Nch/Pch-MOSFET. This IC is suitable to reduce converter size because it has many functions in a small package LQFP-48. ■ Features • 6-channel PWM control with MOSFET direct driving : 5-channel for

Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting)

Photocoupler These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN PhotoDarlington transistor in a 6-pin package. FEATURES • Collector-Emitter Voltage : Min.35V • Current Transfer Ratio : Typ.500 (at IF=1mA, VCE=2V) • Electrical Isolation Voltage : AC2500V

Single Cell Lithium-Ion Battery Charger Controller

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