DESCRIPTION

This Power MOSFET is the second generation of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.145 Ω

■ STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY

■ LOW THRESHOLD DRIVE

APPLICATIONS

■ BATTERY MANAGMENT IN NOMADIC EQUIPMENT

■ POWER MANAGMENT IN CELLULAR PHONES

■ DC-DC CONVERTER