Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-26 package.

Dual N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

Dual N-Channel Enhancement Mode Field Effect Transistor

N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features ■ Max rDS(on) = 60mΩ at VGS = 10

N-Channel PowerTrench짰 MOSFET 100V, 4.4A, 60m廓

General Description This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features ■ Max rDS(on) = 60mΩ at VGS = 10

Lithium-Ion Battery Charger Controller

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IC for CMOS System Reset

文件：155.25 Kbytes Page：20 Pages