DESCRIPTION

This application specific Power MOSFET is the second generation of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) (N-Channel) = 50 mΩ

■ TYPICAL RDS(on) (P-Channel) = 140 mΩ

■ STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY

■ LOW THRESHOLD DRIVE

APPLICATIONS

■ DC/DC CONVERTERS

■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT

■ POWER MANAGEMENT IN CELLULAR PHONES