STS1微波栅栏系列

Multifunction Telecommunications Switch

DESCRIPTION The STS100 combines two 1 Form A solid state relays and one optocoupler in a 16-pin SOIC package. Its small outline and low height make it ideal for use in PCMCIA applications where multi-function devices help reduce cost and board space. FEATURES • Low input control current • Func

Telecom switching

APPLICATIONS • Telecom switching • PCMCIA cards • Fax/modem modules • Set-top boxes • DAA arrangements • Hookswitch • Loop current detect • Pulse dialing FEATURES • Miniature 16pin SOIC package • Function integration (2 relays+1 optocoupler in one package) • High Blocking Voltage (40

TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS  Low voltage, high frequency rectifier  Free wheeling diodes, polarity protection applications FEATURES Low power loss, high efficiency High Operating Junction Temperature Guard ring for overvoltage protection，High reliability RoHS product

TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS  High frequency switch power supply  Free wheeling diodes, polarity protection applications FEATURES Common cathode structure Low power loss, high efficiency High Operating Junction Temperature Trench MOS Schottky technology， High reliability RoHS product

TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS  High frequency switch power supply  Free wheeling diodes, polarity protection applications FEATURES Common cathode structure Low power loss, high efficiency High Operating Junction Temperature Trench MOS Schottky technology， High reliability RoHS product

TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS  Low voltage, high frequency rectifier  Free wheeling diodes, polarity protection applications FEATURES Low power loss, high efficiency High Operating Junction Temperature Guard ring for overvoltage protection，High reliability RoHS product

TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS  Low voltage, high frequency rectifier  Free wheeling diodes, polarity protection applications FEATURES Low power loss, high efficiency High Operating Junction Temperature Guard ring for overvoltage protection，High reliability RoHS product

TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS  Low voltage, high frequency rectifier  Free wheeling diodes, polarity protection applications FEATURES Low power loss, high efficiency High Operating Junction Temperature Guard ring for overvoltage protection，High reliability RoHS product

N - CHANNEL 30V - 0.011ohm - 10A SO-8 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique ” Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rem

P-channel 40 V, 0.0125 廓 typ., 10 A, StripFET??F6 Power MOSFET in SO-8 package

Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness 

P-CHANNEL 30V - 0.012Ohm - 10A SO-8 STripFET II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance. General Features ■ TYPICAL RDS(on) = 0.012 Ω ■ STANDARDOUTLINEFOR EASY AUTOMATED SU

N-CHANNEL 30V - 0.009 ohm - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

N-CHANNEL 30V - 0.009 ohm - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET

DESCRIPTION This application specific Power Mosfet is the third generation of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

N - CHANNEL 30V - 0.0085W - 12A SO-8 STripFET POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

N-CHANNEL 30 V - 0.008 ??- 12 A SO-8 ULTRA LOW GATE CHARGE STripFET??MOSFET

DESCRIPTION The STS12NH3LL is based on the latest generation of ST’s proprietary “STripFET™” technology. An innovative layout enables the device to also exhibit extremely low gate charge for the most demanding requirements as high-side switch in highfrequency DC-DC converters. It’s therefore idea

N-CHANNEL 30V - 0.0045 ohm - 17A SO-8 STripFET??II MOSFET FOR DC-DC CONVERSION

Description This application specific Power MOSFET is the second generation of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. Such features make it the best choice in high efficiency DC-DC

DUAL N-CHANNEL 450V - 4.1ohm - 0.4A SO-8 SuperMESH??POWER MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

N-CHANNEL 600V - 7ohm - 0.4A SO-8 PowerMesh?줚I MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per

Low data-rate, low power sub-1GHz transmitter

Features • Frequency bands: 150-174 MHz, 300-348 MHz, 387-470 MHz, 779-956 MHz • Modulation schemes: 2-FSK, GFSK, MSK, GMSK, OOK, and ASK • Air data rate from 1 to 500 kbps • Very low power consumption (21 mA TX at +11 dBm) • Programmable channel spacing (12.5 kHz min.) • Programmable ou

DC-DC Converters

封装/外壳：10-SMD 模块，6 引线 包装：管件 描述：DC DC CONVERTER 1.2V 电源 - 板安装 直流转换器

DC-DC Converters

封装/外壳：10-SMD 模块，6 引线 包装：管件 描述：DC DC CONVERTER 1.5V 电源 - 板安装 直流转换器

Very low switching gate charge

文件：773.31 Kbytes Page：13 Pages

N-channel 30 V, 0.019 廓, 10 A, SO-8 STripFET??V Power MOSFET

文件：778.92 Kbytes Page：13 Pages

N-Channel 20V (D-S) MOSFET

文件：1.00695 Mbytes Page：9 Pages

High avalanche ruggedness

文件：380.68 Kbytes Page：12 Pages

P-Channel 40 V (D-S) MOSFET

文件：1.01604 Mbytes Page：9 Pages

P-Channel 30-V (D-S) MOSFET

文件：996.75 Kbytes Page：9 Pages

Reliable High Temperature Operation

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Reliable High Temperature Operation

文件：174.78 Kbytes Page：3 Pages

N-channel 30 V, 0.0117 廓, 11 A, SO-8 STripFET??V Power MOSFET

文件：732.37 Kbytes Page：12 Pages

N-Channel 20V (D-S) MOSFET

文件：929.01 Kbytes Page：9 Pages

N-channel 30V - 0.0085廓 - 11A SO-8 Low gate charge STripFET??II Power MOSFET

文件：332.87 Kbytes Page：12 Pages

N-Channel MOSFET uses advanced trench technology

文件：1.38553 Mbytes Page：4 Pages

N-Channel 20V (D-S) MOSFET

文件：928.97 Kbytes Page：9 Pages

N-channel 30V - 0.0085廓 - 11A SO-8 Low gate charge STripFET??II Power MOSFET

文件：332.87 Kbytes Page：12 Pages

NPN Silicon Transistor

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This device is an N-channel Power

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N-Channel MOSFET uses advanced trench technology

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N-channel 30V - 0.008ohm - 12A SO-8 STripFET II Power MOSFET

文件：305.77 Kbytes Page：12 Pages

N-channel 30V - 0.008廓 - 12A SO-8 STripFET??II Power MOSFET

文件：321.65 Kbytes Page：12 Pages

N-channel 30V - 0.008ohm - 12A SO-8 STripFET II Power MOSFET

文件：305.77 Kbytes Page：12 Pages

N-channel 30V - 0.008廓 - 12A SO-8 STripFET??II Power MOSFET

文件：321.65 Kbytes Page：12 Pages

N-channel 30V - 0.008ohm - 12A - SO-8 Ultra low gate charge STripFET TM Power MOSFET

文件：293.32 Kbytes Page：12 Pages

N-channel 30 V - 0.008 廓 - 12 A - SO-8 ultra low gate charge STripFET??Power MOSFET

文件：316.74 Kbytes Page：13 Pages

N-channel 30V - 0.008ohm - 12A - SO-8 Ultra low gate charge STripFET TM Power MOSFET

文件：293.32 Kbytes Page：12 Pages

N-channel 30 V - 0.008 廓 - 12 A - SO-8 ultra low gate charge STripFET??Power MOSFET

文件：316.74 Kbytes Page：13 Pages

High avalanche ruggedness

文件：685.39 Kbytes Page：12 Pages

N-Channel MOSFET uses advanced trench technology

文件：1.20807 Mbytes Page：4 Pages

N-channel 30 V, 0.005 廓, 14 A - SO-8 STripFET??V Power MOSFET

文件：419.84 Kbytes Page：12 Pages

N-channel 40V - 0.0042ohm - 15A - SO-8 STripFET TM Power MOSFET

文件：307.49 Kbytes Page：12 Pages

N-Channel 40-V (D-S) MOSFET

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Conduction losses reduced

文件：588.52 Kbytes Page：12 Pages

Secure Terminal Server with PCMCIA,

文件：627.19 Kbytes Page：2 Pages

N-channel 30V - 0.0045ohm - 17A - SO-8 STripFET II Power MOSFET for DC-DC conversion

文件：321.36 Kbytes Page：12 Pages

N-channel 30V - 0.0045ohm - 17A - SO-8 STripFET II Power MOSFET for DC-DC conversion

文件：321.36 Kbytes Page：12 Pages

N-channel 30V - 0.004OHM - 17A - SO-8 STripFET Power MOSFET for DC-DC conversion

文件：247.72 Kbytes Page：9 Pages