HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Description Dual center tap Schottky rectifier diode suited for high frequency switched mode power supplies. Features ■ High reverse voltage ■ High junction temperature capability ■ Avalanche specification with derating curves Benefits ■ Can challenge bipolar ultrafast dio

High voltage power Schottky rectifier

Features  High reverse voltage  High junction temperature capability  Avalanche specification with derating curves  Insulated package TO-220FPAB  Insulating voltage: 2000 VRMS sine  ECOPACK®2 compliant component for D²PAK on demand

High voltage power Schottky rectifier

Features  High reverse voltage  High junction temperature capability  Avalanche specification with derating curves  Insulated package TO-220FPAB  Insulating voltage: 2000 VRMS sine  ECOPACK®2 compliant component for D²PAK on demand

High voltage power Schottky rectifier

Features  High reverse voltage  High junction temperature capability  Avalanche specification with derating curves  Insulated package TO-220FPAB  Insulating voltage: 2000 VRMS sine  ECOPACK®2 compliant component for D²PAK on demand

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Description Dual center tap Schottky rectifier diode suited for high frequency switched mode power supplies. Features ■ High reverse voltage ■ High junction temperature capability ■ Avalanche specification with derating curves Benefits ■ Can challenge bipolar ultrafast dio

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Description Dual center tap Schottky rectifier diode suited for high frequency switched mode power supplies. Features ■ High reverse voltage ■ High junction temperature capability ■ Avalanche specification with derating curves Benefits ■ Can challenge bipolar ultrafast dio

Schottky Rectifier Diode

FEATURES · High reverse voltage · High junction temperature capability APPLICATIONS · Can challenge bipolar ultrafast diodes with better dynamic characteristics

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Description Dual center tap Schottky rectifier diode suited for high frequency switched mode power supplies. Features ■ High reverse voltage ■ High junction temperature capability ■ Avalanche specification with derating curves Benefits ■ Can challenge bipolar ultrafast dio

High voltage power Schottky rectifier

Features  High reverse voltage  High junction temperature capability  Avalanche specification with derating curves  Insulated package TO-220FPAB  Insulating voltage: 2000 VRMS sine  ECOPACK®2 compliant component for D²PAK on demand

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Description Dual center tap Schottky rectifier diode suited for high frequency switched mode power supplies. Features ■ High reverse voltage ■ High junction temperature capability ■ Avalanche specification with derating curves Benefits ■ Can challenge bipolar ultrafast dio

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Description Dual center tap Schottky rectifier diode suited for high frequency switched mode power supplies. Features ■ High reverse voltage ■ High junction temperature capability ■ Avalanche specification with derating curves Benefits ■ Can challenge bipolar ultrafast dio

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Description Dual center tap Schottky rectifier diode suited for high frequency switched mode power supplies. Features ■ High reverse voltage ■ High junction temperature capability ■ Avalanche specification with derating curves Benefits ■ Can challenge bipolar ultrafast dio

High voltage power Schottky rectifier

Features  High reverse voltage  High junction temperature capability  Avalanche specification with derating curves  Insulated package TO-220FPAB  Insulating voltage: 2000 VRMS sine  ECOPACK®2 compliant component for D²PAK on demand

170 V、20 A双路功率肖特基整流器

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 170V D2PAK 分立半导体产品 二极管 - 整流器 - 阵列

Ultra-fast Recovery Rectifier

文件：378.53 Kbytes Page：2 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 170V D2PAK 分立半导体产品 二极管 - 整流器 - 阵列

30 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor

Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to

Other AC and DC Meters Available

文件：347.05 Kbytes Page：6 Pages