HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Description Dual center tap Schottky rectifier diode suited for high frequency switched mode power supplies. Features ■ High reverse voltage ■ High junction temperature capability ■ Avalanche specification with derating curves Benefits ■ Can challenge bipolar ultrafast dio

封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 170V I2PAK 分立半导体产品 二极管 - 整流器 - 阵列

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Description Dual center tap Schottky rectifier diode suited for high frequency switched mode power supplies. Features ■ High reverse voltage ■ High junction temperature capability ■ Avalanche specification with derating curves Benefits ■ Can challenge bipolar ultrafast dio

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Description Dual center tap Schottky rectifier diode suited for high frequency switched mode power supplies. Features ■ High reverse voltage ■ High junction temperature capability ■ Avalanche specification with derating curves Benefits ■ Can challenge bipolar ultrafast dio

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Description Dual center tap Schottky rectifier diode suited for high frequency switched mode power supplies. Features ■ High reverse voltage ■ High junction temperature capability ■ Avalanche specification with derating curves Benefits ■ Can challenge bipolar ultrafast dio

30 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor

Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to