Ultra low on-resistance

Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. • Extremely low gate charge • Ultra low on-resistance • Low gate input resistance A

Isc N-Channel MOSFET Transistor

文件：318.66 Kbytes Page：2 Pages

N-channel 100 V, 0.0085 Ohm typ., 80 A STripFET F7 Power MOSFET in TO-220 package

N-Channel 100-V (D-S) 175 째C MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC

N-Channel 100-V (D-S) 175 째C MOSFET

文件：974.83 Kbytes Page：7 Pages

N-CHANNEL MOSFET in a TO-220 Plastic Package

文件：1.06093 Mbytes Page：6 Pages

N-Channel MOSFET uses advanced trench technology

文件：1.6474 Mbytes Page：5 Pages

N-CHANNEL MOSFET in a TO-263 Plastic Package

文件：887.74 Kbytes Page：6 Pages