位置：首页 > IC中文资料第269页 > STP6NC80Z
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STP6NC80Z | N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher rug gedness performance as requeste | STMICROELECTRONICS 意法半导体 |   | |
N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher rug gedness performance as requeste | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher rug gedness performance as requeste | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher rug gedness performance as requeste | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher rug gedness performance as requeste | STMICROELECTRONICS 意法半导体 | |
STP6NC80Z产品属性
- 类型
描述
- 型号
STP6NC80Z
- 功能描述
MOSFET TO-220AB
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO-220 |
9896 |
||||
ST |
23+ |
TO-220 |
10000 |
专做原装正品,假一罚百! |
|||
ST |
05+ |
原厂原装 |
50051 |
只做全新原装真实现货供应 |
|||
ST |
23+ |
TO-220 |
30000 |
代理全新原装现货,价格优势 |
|||
ST进口原装 |
23+ |
TO-220 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
ST |
24+ |
TO-220 |
12500 |
原装现货热卖 |
|||
ST |
17+ |
TO-220 |
6200 |
||||
ST |
24+ |
T0-220 |
6945 |
||||
ST |
24+ |
TO-220 |
27500 |
原装正品,价格最低! |
|||
ST |
25+ |
TO-TO-220 |
37650 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
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STP6NC80Z规格书下载地址
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DdatasheetPDF页码索引
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