型号 功能描述 生产厂家&企业 LOGO 操作
STP6NC80Z

N-CHANNEL800V-1.5ohm-5.4ATO-220/FP/D짼PAK/I짼PAKZener-ProtectedPowerMESH?줚IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequeste

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL800V-1.5ohm-5.4ATO-220/FP/D짼PAK/I짼PAKZener-ProtectedPowerMESH?줚IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequeste

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL800V-1.5ohm-5.4ATO-220/FP/D짼PAK/I짼PAKZener-ProtectedPowerMESH?줚IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequeste

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL800V-1.5ohm-5.4ATO-220/FP/D짼PAK/I짼PAKZener-ProtectedPowerMESH?줚IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequeste

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL800V-1.5ohm-5.4ATO-220/FP/D짼PAK/I짼PAKZener-ProtectedPowerMESH?줚IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequeste

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

STP6NC80Z产品属性

  • 类型

    描述

  • 型号

    STP6NC80Z

  • 功能描述

    MOSFET TO-220AB

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-5-14 18:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
TO220
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
ST
23+
TO-220
10000
专做原装正品,假一罚百!
ST意法半导体
22+21+
TO-220
3000
16年电子元件现货供应商 终端BOM表可配单提供样品
ST/意法
23+
NA/
483
优势代理渠道,原装正品,可全系列订货开增值税票
ST
2020+
TO-220
350000
100%进口原装正品公司现货库存
ST
17+
TO-220
12500
原装现货热卖
ST/意法
22+
TO-220
96565
ST
23+
TO-220
30000
代理全新原装现货,价格优势
ST
23+
TO-220
9896
ST
17+
TO-220
6200

STP6NC80Z芯片相关品牌

  • BANNER
  • CHEMI-CON
  • CTMICRO
  • JUXING
  • LINER
  • MCC
  • Microchip
  • MINMAX
  • NEL
  • ROHM
  • SANYO
  • SEOUL

STP6NC80Z数据表相关新闻