位置:首页 > IC中文资料第6180页 > P6NC80

型号 功能描述 生产厂家 企业 LOGO 操作
P6NC80

N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher rug gedness performance as requeste

STMICROELECTRONICS

意法半导体

P6NC80

N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET

STMICROELECTRONICS

意法半导体

N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher rug gedness performance as requeste

STMICROELECTRONICS

意法半导体

N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher rug gedness performance as requeste

STMICROELECTRONICS

意法半导体

N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher rug gedness performance as requeste

STMICROELECTRONICS

意法半导体

N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher rug gedness performance as requeste

STMICROELECTRONICS

意法半导体

P6NC80产品属性

  • 类型

    描述

  • 型号

    P6NC80

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET

更新时间:2026-5-20 9:34:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
2540+
TO-220
8595
只做原装正品假一赔十为客户做到零风险!!
ST
23+
TO-220
16900
正规渠道,只有原装!
ST
23+24
TO-220
9860
原厂原包装。终端BOM表可配单。可开13%增值税
ST
24+
TO220F
36500
原装现货/放心购买
ST
25+
TO-220
20000
原装
ST
22+
TO220
12245
现货,原厂原装假一罚十!
ST
26+
TO-220
60000
只有原装 可配单
ST
25+
TO-220
20000
原装,请咨询
ST/意法
24+
TO220
39197
郑重承诺只做原装进口现货
原装
最新
TO220
8900
公司原装现货特价长期供货欢迎来电咨询

P6NC80数据表相关新闻