型号 功能描述 生产厂家 企业 LOGO 操作
P6NC80

N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher rug gedness performance as requeste

STMICROELECTRONICS

意法半导体

P6NC80

N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET

STMICROELECTRONICS

意法半导体

N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher rug gedness performance as requeste

STMICROELECTRONICS

意法半导体

N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher rug gedness performance as requeste

STMICROELECTRONICS

意法半导体

N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher rug gedness performance as requeste

STMICROELECTRONICS

意法半导体

N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D짼PAK/I짼PAK Zener-Protected PowerMESH?줚II MOSFET

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher rug gedness performance as requeste

STMICROELECTRONICS

意法半导体

P6NC80产品属性

  • 类型

    描述

  • 型号

    P6NC80

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET

更新时间:2025-10-16 16:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
23+
TO-220
66577
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST
22+
TO220
12245
现货,原厂原装假一罚十!
ST/意法
24+
TO220
39197
郑重承诺只做原装进口现货
ST
23+
TO-220
16900
正规渠道,只有原装!
ST
24+
TO-220
8000
ST
24+
TO220F
36500
原装现货/放心购买
原装
1923+
TO220
8900
公司原装现货特价长期供货欢迎来电咨询
S
22+
TO-220FP
6000
十年配单,只做原装
ST
23+24
TO-220
9860
原厂原包装。终端BOM表可配单。可开13%增值税
ST
22+
TO-220
16900
支持样品,原装现货,提供技术支持!

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