N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(o

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRos(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRos(

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5.7A@TC=25℃ ·DrainSourceVoltage-VDSS=800(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=1.9Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRos(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRos(

N-CHANNEL800V-1.8ohm-5.4A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR

N-CHANNEL800V-1.8Ω-5.4A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1.8Ω ■AVALANCERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■VERYHIGHCURRENTCAPABILITY ■APPLICATIONORIENTEDCHARACTERIZATION APPLICAT

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

TYPICALRDS(on)=1.68Ω ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWINTRINSICCAPACITANCES ■GATECHARGEMINIMIZED ■REDUCEDTHRESHOLDVOLTAGESPREAD ■THROUGH-HOLEI2PAK(TO-262)POWERPACKAGEINTUBE(SUFFIX”-1”) ■SURFACE-M

N-CHANNEL800V-1.8ohm-5.4A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR

N-CHANNEL800V-1.8Ω-5.4A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1.8Ω ■AVALANCERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■VERYHIGHCURRENTCAPABILITY ■APPLICATIONORIENTEDCHARACTERIZATION APPLICAT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.4A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.