N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

TYPICALRDS(on)=1.68Ω ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWINTRINSICCAPACITANCES ■GATECHARGEMINIMIZED ■REDUCEDTHRESHOLDVOLTAGESPREAD ■THROUGH-HOLEI2PAK(TO-262)POWERPACKAGEINTUBE(SUFFIX”-1”) ■SURFACE-M

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N-CHANNEL800V-1.8Ω-5.4A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1.8Ω ■AVALANCERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■VERYHIGHCURRENTCAPABILITY ■APPLICATIONORIENTEDCHARACTERIZATION APPLICAT

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N-CHANNEL800V-1.8Ω-5.4A-TO-247/ISOWATT218FASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1.8Ω ■AVALANCERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■VERYHIGHCURRENTCAPABILITY ■APPLICATIONORIENTEDCHARACTERIZATION APPLICAT

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(o

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRos(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRos(