位置：首页 > IC中文资料第1225页 > STP6NA60F
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS( | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   | |
N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptmizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(o | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS( | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS( | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1Ω ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWINTRINSICCAPACITANCES ■GATECHARGEMINIMIZED ■REDUCEDTHRESHOLDVOLTAGESPREAD ■THROUGH-HOLEI2PAK(TO- | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
PowerMOStransistorsLowcapacitanceAvalancheenergyrated 文件：21.42 Kbytes Page：4 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  | | |
PowerMOStransistorsLowcapacitanceAvalancheenergyrated 文件：25.61 Kbytes Page：5 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | |
STP6NA60F产品属性
- 类型
描述
- 型号
STP6NA60F
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR SUBBING WITH 2SK1404
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
TO220F |
36900 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
ST/进口原 |
2315+ |
TO-220F |
3866 |
优势代理渠道,原装现货,可全系列订货 |
|||
ST |
23+ |
TO-220F |
10000 |
专做原装正品,假一罚百! |
|||
ST/意法 |
22+ |
TO-220 |
5623 |
只做原装正品现货!或订货假一赔十! |
|||
ST全系列 |
22+23+ |
TO-220F |
26012 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法 |
2022 |
TO-220F |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
ST |
2020+ |
TO-220 |
350000 |
100%进口原装正品公司现货库存 |
|||
ST/意法 |
23+ |
NA/ |
80 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST/意法 |
TO-220F |
265209 |
假一罚十,原包原标签,常备现货 |
||||
ST-意法半导体 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
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STP6NA60F规格书下载地址
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