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P6NA60中文资料

厂家型号

P6NA60

文件大小

206.48Kbytes

页面数量

10

功能描述

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

数据手册

下载地址一下载地址二到原厂下载

生产厂商

STMICROELECTRONICS

P6NA60数据手册规格书PDF详情

DESCRIPTION

This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

■ TYPICAL RDS(on) = 1 Ω

■ ± 30V GATE TO SOURCE VOLTAGE RATING

■ 100 AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100°C

■ LOW INTRINSIC CAPACITANCES

■ GATE GHARGE MINIMIZED

■ REDUCED THRESHOLD VOLTAGE SPREAD

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

更新时间:2025-10-5 16:01:00
供应商 型号 品牌 批号 封装 库存 备注 价格
24+
1
自己现货
ST/进口原
17+
TO-220
6200
ST/进口原
24+
TO-220
5000
只做原装公司现货
ST
20+
TO-220
38560
原装优势主营型号-可开原型号增税票
ST/意法
23+
TO-220
50000
全新原装正品现货,支持订货
VBsemi
23+
TO220
50000
全新原装正品现货,支持订货
S
22+
TO-
6000
十年配单,只做原装
ST
25+
TOP220
4500
全新原装、诚信经营、公司现货销售!
S
23+
TO-
6000
原装正品,支持实单
VBsemi
21+
TO220
10026
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