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Extremely high dv/dt ruggedness

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STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 28A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 0.11Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Extremely high dv/dt ruggedness

Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologi

STMICROELECTRONICS

意法半导体

Extremely low gate charge and input capacitance

文件:915.26 Kbytes Page:15 Pages

STMICROELECTRONICS

意法半导体

Extremely high dv/dt ruggedness

文件:691.27 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

更新时间:2026-1-4 18:16:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SST
原厂封装
9800
原装进口公司现货假一赔百
ST(意法)
24+
NA/
8735
原厂直销,现货供应,账期支持!
ST/意法
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
ST/意法半导体
23+
Through Hole
12820
正规渠道,只有原装!
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST/意法半导体
21+
Through Hole
8860
原装现货,实单价优
ST/意法
25+
SMD
202459
明嘉莱只做原装正品现货
ST
26+
TO-220
60000
只有原装 可配单
ST
2526+
原厂封装
50000
15年芯片行业经验/只供原装正品:0755-83270454邹小姐
ST/意法半导体
21+
Through Hole
8860
只做原装,质量保证

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