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STP30价格
参考价格:¥21.1992
型号:STP300NH02L 品牌:STMicroelectronics 备注:这里有STP30多少钱,2024年最近7天走势,今日出价,今日竞价,STP30批发/采购报价,STP30行情走势销售排行榜,STP30报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsuniqueSingleFeatureSizestrip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearema | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL 30V - 0.019ohm - 40A - TO-220 STripFET POWER MOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemar | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL 30V - 0.019ohm - 40A - TO-220 STripFET POWER MOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemar | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-Channel Logic Level E nhancement Mode Field Effect Transistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-220andTO-263Package. | Samhop 三合微科 | |||
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.045Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.045Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.045Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.045Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 100 V, 0.02 廓 typ., 32 A STripFET??F7 Power MOSFET in a TO-220 package Description ThisN-channelPowerMOSFETutilizes STripFET™F7technologywithanenhanced trenchgatestructurethatresultsinverylowonstateresistance,whilealsoreducinginternal capacitanceandgatechargeforfasterandmore efficientswitching. Features AmongthelowestRDS(o | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Automotive-grade N-channel 650 V, 102 mΩ typ., 28 A MDmesh DM6 Power MOSFET in a TO-220 package Features •AEC-Q101qualified •Fast-recoverybodydiode •LowerRDS(on)perareavspreviousgeneration •Lowgatecharge,inputcapacitanceandresistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected Description Thishigh-voltageN-channelPowerMOSFETis | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 650 V, 0.125 廓, 22 A, MDmesh??V Power MOSFET D짼PAK, TO-220FP, I짼PAK, TO-220, TO-247 Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL 30V - 0.028 ohm - 30A TO-220/TO-220FP STripFET POWER MOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearem | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL 30V - 0.028 ohm - 30A TO-220/TO-220FP STripFET POWER MOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearem | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL 60V - 0.042 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsa | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL 60V - 0.042 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsa | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL 60V - 0.035 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforeare | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N - CHANNEL 60V - 0.035 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforeare | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 100V - 0.038 ohm - 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET??II POWER MOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarka | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 100V - 0.038 ohm - 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET??II POWER MOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarka | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
isc N-Channel MOSFET Transistor •FEATURES •WithTO-220packaging •Highspeedswitching •Veryhighcommutationruggedness •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperationz •APPLICATIONS •PFCstages •LCD&PDPTV •Powersupply •Switchi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel 200V - 0.065廓 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET??Power MOSFET Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconverters. Features ■Gatechargemin | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 600V - 0.11廓 - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??II Power MOSFET (with fast diode) Description TheFDmesh™IIseriesbelongstothesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompanysstriplayoutandassociatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybody | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 600 V, 0.11 廓, 25 A FDmesh??II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247 Description TheFDmesh™IIseriesbelongstothesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompanysstriplayoutandassociatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybody | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 24V - 120A - TO-220 / D2PAK STripFET TM Power MOSFET 文件:474.32 Kbytes Page:14 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 24V - 120A - TO-220 / D2PAK STripFET??Power MOSFET 文件:329.16 Kbytes Page:14 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
P Channel Enhancement Mode MOSFET 文件:664 Kbytes Page:6 Pages | STANSONStanson Technology Stanson 科技 | |||
N-Channel 60 V (D-S) MOSFET 文件:1.31583 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
isc N-Channel MOSFET Transistor 文件:320.21 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-Channel 200 V (D-S) MOSFET 文件:1.58708 Mbytes Page:7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
isc N-Channel MOSFET Transistor 文件:320.8 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel 100V - 0.038廓 - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET??II Power MOSFET 文件:510.1 Kbytes Page:16 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-Channel 100-V (D-S) MOSFET 文件:949.88 Kbytes Page:7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
Isc N-Channel MOSFET Transistor 文件:253.45 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel 100V - 0.038廓 - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET??II Power MOSFET 文件:510.1 Kbytes Page:16 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-Channel 100-V (D-S) MOSFET 文件:901.94 Kbytes Page:7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
Isc N-Channel MOSFET Transistor 文件:313.77 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET 文件:392.22 Kbytes Page:16 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-Channel 200 V (D-S) MOSFET 文件:940.14 Kbytes Page:7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-channel 300V - 0.078廓 - 30A - TO-220 Ultra low gate charge MDmesh??II Power MOSFET 文件:290.93 Kbytes Page:12 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 500 V, 0.090 廓, 27 A MDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 文件:628.06 Kbytes Page:18 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel 600 V, 0.1 廓, 25 A, MDmesh??II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK 文件:768.37 Kbytes Page:18 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL 150V - 0.085 W - 10A TO-220FP MESH OVERLAY??POWER MOSFET 文件:317.47 Kbytes Page:9 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-Channel 200 V (D-S) MOSFET 文件:1.03002 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 |
STP30产品属性
- 类型
描述
- 型号
STP30
- 功能描述
MOSFET N Ch 600V 19A Pwr MESH IGBT
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
2020+ |
TO-220 |
350000 |
100%进口原装正品公司现货库存 |
|||
ST |
23+ |
TO-220 |
8795 |
||||
RAKON |
19+ |
SMD |
4 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RAKON |
23+ |
NA/ |
10 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST/意法 |
23+ |
TO-220 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
ST |
TO-220 |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
ST |
17+ |
TO-220 |
15000 |
原装现货热卖 |
|||
ST |
23+ |
TO-220 |
10000 |
专做原装正品,假一罚百! |
|||
RAKON |
22+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
|||
ST全系列 |
22+23+ |
TO-220 |
26752 |
绝对原装正品全新进口深圳现货 |
STP30规格书下载地址
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- STP2N62K3
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- STP2N105K5
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- STP27N3LH5
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- STP25N80K5
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- STP24NM65N
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- STP24NF10
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- STODD01
- STOD32W
- STOD32A
- STOD30
- STOD14
- STOD13A
- STOD03B
- STOD03A
- STOD02
- STO875
- STO2ROT
- STO1ROT
- STO1875
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2020-3-12
DdatasheetPDF页码索引
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