DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.

■ TYPICAL RDS(on) = 0.035 Ω

■ 100 AVALANCHE TESTED

■ LOW GATE CHARGE

■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS

■ DC MOTOR CONTROL

■ DC-DC & DC-AC CONVERTERS

■ SYNCHRONOUS RECTIFICATION