N-CHANNEL 200V - 0.10 OHM - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET II MOSFET

DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. General Features ■ TYPICAL RDS(

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 18A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 125mΩ(Max)@VGS= 10V APPLICATIONS · Switching · DC-DC Converters · Primary side switch

N-Channel 200 V (D-S) MOSFET

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isc N-Channel MOSFET Transistor

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Panels and Panel Accessories

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Panels and Panel Accessories

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PERFORATED PANELS

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