TMOS POWER FET 20 AMPERES 200 VOLTS RDS(on) = 0.16 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low v

TMOS POWER FET 20 AMPERES 200 VOLTS RDS(on) = 0.16 OHM

TMOS POWER FET 20 AMPERES 200 VOLTS RDS(on) = 0.16 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low v

N?묬hannel Power MOSFET

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isc N-Channel MOSFET Transistor

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N−Channel Power MOSFET

N-Channel 200 V (D-S) MOSFET

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isc N-Channel MOSFET Transistor

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Panels and Panel Accessories

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Panels and Panel Accessories

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PERFORATED PANELS

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