TMOS POWER FET 20 AMPERES 200 VOLTS RDS(on) = 0.16 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low v

TMOS POWER FET 20 AMPERES 200 VOLTS RDS(on) = 0.16 OHM

TMOS POWER FET 20 AMPERES 200 VOLTS RDS(on) = 0.16 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low v

N−Channel Power MOSFET

N?묬hannel Power MOSFET

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isc N-Channel MOSFET Transistor

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TMOS POWER FET 20 AMPERES 200 VOLTS

The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E–FET is designed to withstand high

N-CHANNEL 200V - 0.10 OHM - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET II MOSFET

DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. General Features ■ TYPICAL RDS(

N-CHANNEL 200V - 0.10 OHM - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET II MOSFET

DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. General Features ■ TYPICAL RDS(