isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.14Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL 100V - 0.14 ohm - 16A - TO-220 POWER MOS TRANSISTOR

N - CHANNEL 100V - 0.14 Ω - 16A - TO-220 POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.14 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ HIGH dV/dt RUGGEDNESS ■ APPLICATION ORIENTED CHARACTE

N-Channel 100-V (D-S) MOSFET

文件：939.26 Kbytes Page：7 Pages

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 15.2A, RDS(ON) = 120mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 15.2A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 15.2A, RDS(ON) = 115mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 125mW @VGS = 5V.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 11A, RDS(ON) = 120mW @VGS = 10V. RDS(ON) = 135mW @VGS = 5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.