| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CEB16N10 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 15.2A, RDS(ON) = 120mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 |   | |
CEB16N10 | N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. | CET-MOS 华瑞 | | |
CEB16N10 | N Channel MOSFET | CET 华瑞 | | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 115mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 125mW @VGS = 5V. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
N Channel MOSFET | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 15.2A, RDS(ON) = 120mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 13.3A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 华瑞 | | ||
N - CHANNEL 100V - 0.14 ohm - 16A - TO-220 POWER MOS TRANSISTOR N - CHANNEL 100V - 0.14 Ω - 16A - TO-220 POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.14 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ HIGH dV/dt RUGGEDNESS ■ APPLICATION ORIENTED CHARACTE | STMICROELECTRONICS 意法半导体 | |
CEB16N10产品属性
- 类型
描述
- BVDSS(V)：
100
- Rds(on)mΩ@10V：
120
- ID(A)：
15.2
- Qg(nC)@10V(typ)：
11
- RθJC(℃/W)：
2.5
- Pd(W)：
60
- Configuration：
Single
- Polarity：
N
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
24+ |
50000 |
|||||
CET |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 承诺假一赔百 |
|||
SR |
23+ |
T0-263 |
5000 |
原装正品,假一罚十 |
|||
CET(华瑞) |
2447 |
TO-263 |
105000 |
800个/圆盘一级代理专营品牌!原装正品,优势现货,长 |
|||
CET-MOS |
100 |
||||||
CET-MOS |
24+ |
con |
100 |
现货常备产品原装可到京北通宇商城查价格 |
|||
SR |
21+ |
TO251 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CET/華瑞 |
2022+ |
TO-263 |
50000 |
原厂代理 终端免费提供样品 |
|||
CET/華瑞 |
2511 |
TO-263 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
26+ |
N/A |
69000 |
一级代理-主营优势-实惠价格-不悔选择 |
CEB16N10芯片相关品牌
CEB16N10规格书下载地址
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2019-11-25
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