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STP11NM65价格
参考价格：￥13.4241
型号：STP11NM65N 品牌：STMicroelectronics 备注：这里有STP11NM65多少钱，2026年最近7天走势，今日出价，今日竞价，STP11NM65批发/采购报价，STP11NM65行情走势销售排行榜，STP11NM65报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-channel 650 V, 0.425 廓 typ., 11 A MDmesh?줚I Power MOSFET in DPAK, TO-220FP, I짼PAKFP and TO-220 packages Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suit | STMICROELECTRONICS 意法半导体 |   | ||
N-channel 650 V, 0.425 ohm typ., 11 A MDmesh ll Power MOSFET Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suit | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor 文件：319.13 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.03499 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in TO-220 package | STMICROELECTRONICS 意法半导体 | | ||
N-channel 650 V, 0.425 廓 typ., 11 A MDmesh?줚I Power MOSFET in DPAK, TO-220FP, I짼PAKFP and TO-220 packages Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suit | STMICROELECTRONICS 意法半导体 | | ||
N-channel 650 V, 0.425 ohm typ., 11 A MDmesh ll Power MOSFET Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suit | STMICROELECTRONICS 意法半导体 | | ||
N-channel 650 V, 0.425 ohm typ., 11 A MDmesh ll Power MOSFET Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suit | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.032569 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor 文件：323.45 Kbytes Page：2 Pages | ISC 无锡固电 | |
STP11NM65产品属性
- 类型
描述
- 型号
STP11NM65
- 功能描述
MOSFET N-Channel 650V Pwr Mosfet
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
100 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST/意法半导体 |
23+ |
TO-220-3 |
12700 |
买原装认准中赛美 |
|||
ST/意法半导体 |
24+ |
TO-220-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
ST |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
原装现货,实单价优 |
|||
ST/意法 |
21+ |
TO-220 |
5000 |
优势供应 实单必成 可开增值税13点 |
|||
STMICROELECTRONICS |
22+ |
TO-220-3 |
20000 |
只做原装 品质保障 |
|||
ST全系列 |
25+23+ |
TO-220 |
25844 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
只做原装,质量保证 |
|||
ST/意法半导体 |
23+ |
TO-220-3 |
12820 |
正规渠道,只有原装! |
STP11NM65规格书下载地址
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