型号 功能描述 生产厂家 企业 LOGO 操作
STF11NM65N

N-channel 650 V, 0.425 廓 typ., 11 A MDmesh?줚I Power MOSFET in DPAK, TO-220FP, I짼PAKFP and TO-220 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suit

STMICROELECTRONICS

意法半导体

STF11NM65N

N-channel 650 V, 0.425 ohm typ., 11 A MDmesh ll Power MOSFET

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suit

STMICROELECTRONICS

意法半导体

STF11NM65N

N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in TO-220FP package

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.425 廓 typ., 11 A MDmesh?줚I Power MOSFET in DPAK, TO-220FP, I짼PAKFP and TO-220 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suit

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.425 ohm typ., 11 A MDmesh ll Power MOSFET

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suit

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件:1.032569 Mbytes Page:8 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

文件:323.45 Kbytes Page:2 Pages

ISC

无锡固电

STF11NM65N产品属性

  • 类型

    描述

  • 型号

    STF11NM65N

  • 功能描述

    MOSFET N-Channel 650V Pwr Mosfet

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-10-10 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
109
优势代理渠道,原装正品,可全系列订货开增值税票
ST/意法
24+
TO-220
990000
明嘉莱只做原装正品现货
ST
14+
TO-220F
38
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST/意法
22+
N/A
5850
现货,原厂原装假一罚十!
ST
24+
TO-220F
1250
原装现货热卖
ST/意法
14+
TO-220F
38
ST/意法
2450+
TO-220F
9850
只做原装正品现货或订货假一赔十!
ST/意法
21+
NA
12820
只做原装,质量保证
ST全系列
25+23+
TO-220F
26473
绝对原装正品全新进口深圳现货
ST(意法)
2511
TO-220FP
4505
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价

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