Very high voltage NPN power transistor

Description The device is an NPN power bipolar transistor manufactured using the latest high-voltage diffused collector technology. Features ■ High gain ■ Very high voltage capability Applications ■ Haptic ■ High voltage solenoid driving

超高压NPN功率晶体管

The device is an NPN power bipolar transistor manufactured using the latest high-voltage diffused collector technology. • High gain \n• Very high voltage capability;

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 1200V 0.2A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

DC-AC INVERTER UNIT 5.0W DUAL OUTPUTS WITH DIMMING FUNCTION

DESCRIPTION : This DC to AC Inverter was developed for large size LCD panel as Multiple Media, Replacement of CRT Monitor and other general Purpose. FEATURES : • Current Feedback Circuit • High Efficiency • Low noise with voltage resonant circuit • Regulated output current •

Dual N-Ch 100V Fast Switching MOSFETs

Features Advanced Trench MOS Technology Low Gate Charge 100 EAS Guaranteed Green Device Available Application Portable Equipment. Battery Powered Systems. Hard Switching and High-Speed Circuit.

Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

Features • Low on-resistance • Capable of 4.5 V gate drive • High density mounting • Pb-free • Halogen-free Applications DC-DC conversion for PC and Server.

Low-Loss 70MHz IF SAW Filter (BW=16 MHz)

Maximum Rating: 1. Input Power Level: +20 dBm 2. Operating Temperature: -10°C to +70°C 3. Storage Temperature: -40°C to +85°C

20V(D-S) N-Channel Enhancement Mode Power MOS FET

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