Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

Features • Low on-resistance • Capable of 4.5 V gate drive • High density mounting • Pb-free • Halogen-free Applications DC-DC conversion for PC and Server.

Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

TC-ER VN/PVC, 2G C #14 Str BC, PVC-NYL Ins, E2, 1 C #14 Str BC Ins Grnd, OS, Blk PVC Jkt, 600V TC-ER 150V NPLF 90C Dry 75C Wet SUN RES DIR BUR

Product Description UL Type TC-ER (1277) PVC-Nylon/PVC, 2+G Conductor 14AWG (7x22) Bare Copper, PVC-NYL Insulation E2 Color Code, 1 Conductor 14 (7x22) Bare Copper Insulated Ground, Overall Beldfoil® Shield, Black PVC Outer Jacket, 600V TC-ER 150V NPLF 90C Dry 75C Wet SUN RES DIR BUR

TC VN/PVC, 2 C #14 Str BC, PVC-NYL Ins E2, OS, Blk PVC Jkt, 600V TC 90C Dry/Wet SUN RES DIR BUR

Product Description UL Type TC (1277) PVC-Nylon/PVC, 2 Conductor 14AWG (7x22) Bare Copper, PVC-NYL Insulation E2 Color Code, Overall Beldfoil® Shield, Black PVC Outer Jacket, 600V TC 90C Dry/Wet SUN RES DIR BUR

ACTUATOR, SWITCH, SQUARE, LATCH RoHS : Compliant

Illuminated or non-illuminated pushbutton switches Panel cut-out Ø 22 (.866) or 29,5 x 21,5 (1.160x.846)

ACTUATOR, SWITCH, SQUARE, LATCH RoHS : Compliant

Illuminated or non-illuminated pushbutton switches Panel cut-out Ø 22 (.866) or 29,5 x 21,5 (1.160x.846)

192MHz ??400MHz Low Phase Noise LVDS VCXO (12 ??25MHz Crystal)

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