丝印代码：80N3LLH6；N-channel 30 V, 0.0046, 21 A PowerFLAT 5x6 STripFET VI DeepGATE Power MOSFET

Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge Application ■ Switching applications Description This device is an N-channel Power MOSFET developed using the 6t

N-channel 75 V, 4.5 m typ., 18 A STripFET DeepGATE VI Power MOSFET in PowerFLAT 5x6 package

Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. • Low gate charge • Very low on-resistance • High avalanche ru

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power • Designed for application in fiber-optic networks • Laser diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary photodiode at rear mirror for monitoring and control of radiant power • Hermetically

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power • Designed for application in fiber-optic networks • Laser diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary photodiode at rear mirror for monitoring and control of radiant power • Hermetically

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power • Designed for application in fiber-optic networks • Laser diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary photodiode at rear mirror for monitoring and control of radiant power • Hermetically

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power • Designed for application in fiber-optic networks • Laser diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary photodiode at rear mirror for monitoring and control of radiant power • Hermetically

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power • Designed for application in fiber-optic networks • Laser diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary photodiode at rear mirror for monitoring and control of radiant power • Hermetically

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power • Designed for application in fiber-optic networks • Laser diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary photodiode at rear mirror for monitoring and control of radiant power • Hermetically

1550 nm Laser in Receptacle Package, Low Power

1550 nm Laser in Receptacle Package, Low Power • Designed for applications in fiber optic networks • Laser Diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary Photodiode at rear mirror for monitoring and control of radiant power • Hermetically sealed subc

1550 nm Laser in Receptacle Package, Low Power

1550 nm Laser in Receptacle Package, Low Power • Designed for applications in fiber optic networks • Laser Diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary Photodiode at rear mirror for monitoring and control of radiant power • Hermetically sealed subc

N-channel 650 V, 1 typ., 4 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100 avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device

丝印代码：8N6LF3；Automotive-grade N-channel 60 V, 22.5 mΩ typ., 7.8 A STripFET™ F3 Power MOSFET in a PowerFLAT™ 5x6 package

Features  AEC-Q101 qualified  Logic level VGS(th)  175 °C maximum junction temperature  100 avalanche rated  Wettable flank package Applications  Switching applications Description This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed

丝印代码：8P4F6；P-channel 40 V, 0.0175 廓 typ.,8 A, STripFET??F6 Power MOSFET in a PowerFLAT??3.3 x 3.3 package

Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features • Very low on-resistance • Very low gate charge • High avalanche ruggedness

N-channel 40V - 0.0042ohm - 80A - PowerFLAT (6x5) STripFET Power MOSFET for DC-DC conversion

N-channel 40V - 0.0042ohm - 80A - PowerFLAT (6x5) STripFET Power MOSFET for DC-DC conversion

文件：347.03 Kbytes Page：12 Pages

N-channel 75 V, 4.5 m typ., 18 A STripFET DeepGATE VI Power MOSFET in PowerFLAT 5x6 package

N-CHANNEL 30V - 0.0045ohm - 80A PowerFLAT(6X5) STripFET II MOSFET

N-CHANNEL 30V - 0.0045ohm - 80A PowerFLAT(6X5) STripFET II MOSFET

文件：344.62 Kbytes Page：9 Pages

N-channel 60 V, 0.0057 廓, 19 A PowerFLAT??5x6 STripFET??Power MOSFET

文件：534.39 Kbytes Page：15 Pages

High avalanche ruggedness

文件：1.00926 Mbytes Page：16 Pages

丝印代码：8DN10LF3；Automotive-grade dual N-channel 100 V, 25 m??typ., 7.8 A STripFET??F3 Power MOSFET in a PowerFLAT??5x6 double island package

文件：917.81 Kbytes Page：15 Pages

Automotive-grade dual N-channel 60 V, 22.5 m typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double island package

文件：1.043589 Mbytes Page：18 Pages

丝印代码：8DN6LF6；Automotive-grade dual N-channel 60 V, 21 m廓 typ., 32 A STripFET??F6 Power MOSFET in a PowerFLAT??5x6 DI package

文件：939.17 Kbytes Page：16 Pages

High avalanche ruggedness

文件：619.13 Kbytes Page：14 Pages

N-channel 100 V, 25 mA typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 package

文件：850.49 Kbytes Page：13 Pages

包装：管件 描述：MOSFET N-CH 650V 5A PWRFLAT56 HV 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-channel 650 V, 0.56, 7 A MDmesh V Power MOSFET in PowerFLAT 5x5

文件：1.03205 Mbytes Page：13 Pages

High avalanche ruggedness

文件：893.07 Kbytes Page：12 Pages

High avalanche ruggedness

文件：983.28 Kbytes Page：14 Pages

N-channel 800 V, 0.80 typ., 4.5 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT

文件：1.40505 Mbytes Page：17 Pages

N-channel 30V - 0.012ohm - 8A - PowerFLAT Ultra low gate charge STripFET Power MOSFET

文件：285.27 Kbytes Page：12 Pages

N-CHANNEL 30 V - 0.012 ??- 8 A PowerFLAT??ULTRA LOW GATE CHARGE STripFET??MOSFET

文件：164.93 Kbytes Page：7 Pages

N-channel 30V - 0.012ohm - 8A - PowerFLAT Ultra low gate charge STripFET Power MOSFET

文件：285.27 Kbytes Page：12 Pages

Switching applications

文件：543.6 Kbytes Page：14 Pages