N-channel 30 V, 0.0046, 21 A PowerFLAT 5x6 STripFET VI DeepGATE Power MOSFET

Features ■RDS(on)*Qgindustrybenchmark ■Extremelylowon-resistanceRDS(on) ■Highavalancheruggedness ■Lowgatedrivepowerlosses ■Verylowswitchinggatecharge Application ■Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingthe6t

N-channel 75 V, 4.5 m typ., 18 A STripFET DeepGATE VI Power MOSFET in PowerFLAT 5x6 package

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthe6thgenerationofSTripFET™DeepGATE™technology,withanewgatestructure.TheresultingPowerMOSFETexhibitsthelowestRDS(on)inallpackages. •Lowgatecharge •Verylowon-resistance •Highavalancheru

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1550nmLaserinCoaxialPackagewithSM-Pigtail,LowPower •Designedforapplicationinfiber-opticnetworks •LaserdiodewithMulti-QuantumWellstructure •Suitableforbitratesupto1Gbit/s •Ternaryphotodiodeatrearmirrorformonitoringandcontrolofradiantpower •Hermetically

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1550nmLaserinCoaxialPackagewithSM-Pigtail,LowPower •Designedforapplicationinfiber-opticnetworks •LaserdiodewithMulti-QuantumWellstructure •Suitableforbitratesupto1Gbit/s •Ternaryphotodiodeatrearmirrorformonitoringandcontrolofradiantpower •Hermetically

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1550nmLaserinCoaxialPackagewithSM-Pigtail,LowPower •Designedforapplicationinfiber-opticnetworks •LaserdiodewithMulti-QuantumWellstructure •Suitableforbitratesupto1Gbit/s •Ternaryphotodiodeatrearmirrorformonitoringandcontrolofradiantpower •Hermetically

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1550nmLaserinCoaxialPackagewithSM-Pigtail,LowPower •Designedforapplicationinfiber-opticnetworks •LaserdiodewithMulti-QuantumWellstructure •Suitableforbitratesupto1Gbit/s •Ternaryphotodiodeatrearmirrorformonitoringandcontrolofradiantpower •Hermetically

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1550nmLaserinCoaxialPackagewithSM-Pigtail,LowPower •Designedforapplicationinfiber-opticnetworks •LaserdiodewithMulti-QuantumWellstructure •Suitableforbitratesupto1Gbit/s •Ternaryphotodiodeatrearmirrorformonitoringandcontrolofradiantpower •Hermetically

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1550nmLaserinCoaxialPackagewithSM-Pigtail,LowPower •Designedforapplicationinfiber-opticnetworks •LaserdiodewithMulti-QuantumWellstructure •Suitableforbitratesupto1Gbit/s •Ternaryphotodiodeatrearmirrorformonitoringandcontrolofradiantpower •Hermetically

1550 nm Laser in Receptacle Package, Low Power

1550nmLaserinReceptaclePackage,LowPower •Designedforapplicationsinfiberopticnetworks •LaserDiodewithMulti-QuantumWellstructure •Suitableforbitratesupto1Gbit/s •TernaryPhotodiodeatrearmirrorformonitoringandcontrolofradiantpower •Hermeticallysealedsubc

1550 nm Laser in Receptacle Package, Low Power

1550nmLaserinReceptaclePackage,LowPower •Designedforapplicationsinfiberopticnetworks •LaserDiodewithMulti-QuantumWellstructure •Suitableforbitratesupto1Gbit/s •TernaryPhotodiodeatrearmirrorformonitoringandcontrolofradiantpower •Hermeticallysealedsubc

N-channel 650 V, 1 typ., 4 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •100avalanchetested •Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice

Automotive-grade N-channel 60 V, 22.5 mΩ typ., 7.8 A STripFET™ F3 Power MOSFET in a PowerFLAT™ 5x6 package

Features AEC-Q101qualified LogiclevelVGS(th) 175°Cmaximumjunctiontemperature 100avalancherated Wettableflankpackage Applications Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingSTripFET™F3technology.Itis designed

P-channel 40 V, 0.0175 廓 typ.,8 A, STripFET??F6 Power MOSFET in a PowerFLAT??3.3 x 3.3 package

Description ThisdeviceisaP-channelPowerMOSFET developedusingtheSTripFET™F6technology, withanewtrenchgatestructure.Theresulting PowerMOSFETexhibitsverylowRDS(on)inall packages. Features •Verylowon-resistance •Verylowgatecharge •Highavalancheruggedness

N-channel 40V - 0.0042ohm - 80A - PowerFLAT (6x5) STripFET Power MOSFET for DC-DC conversion

文件：347.03 Kbytes Page：12 Pages

N-CHANNEL 30V - 0.0045ohm - 80A PowerFLAT(6X5) STripFET II MOSFET

文件：344.62 Kbytes Page：9 Pages

N-channel 60 V, 0.0057 廓, 19 A PowerFLAT??5x6 STripFET??Power MOSFET

文件：534.39 Kbytes Page：15 Pages

High avalanche ruggedness

文件：1.00926 Mbytes Page：16 Pages

Automotive-grade dual N-channel 100 V, 25 m??typ., 7.8 A STripFET??F3 Power MOSFET in a PowerFLAT??5x6 double island package

文件：917.81 Kbytes Page：15 Pages

Automotive-grade dual N-channel 60 V, 22.5 m typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double island package

文件：1.043589 Mbytes Page：18 Pages

Automotive-grade dual N-channel 60 V, 21 m廓 typ., 32 A STripFET??F6 Power MOSFET in a PowerFLAT??5x6 DI package

文件：939.17 Kbytes Page：16 Pages

High avalanche ruggedness

文件：619.13 Kbytes Page：14 Pages

N-channel 100 V, 25 mA typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 package

文件：850.49 Kbytes Page：13 Pages

包装：管件 描述：MOSFET N-CH 650V 5A PWRFLAT56 HV 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-channel 650 V, 0.56, 7 A MDmesh V Power MOSFET in PowerFLAT 5x5

文件：1.03205 Mbytes Page：13 Pages

High avalanche ruggedness

文件：893.07 Kbytes Page：12 Pages

High avalanche ruggedness

文件：983.28 Kbytes Page：14 Pages

N-channel 800 V, 0.80 typ., 4.5 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT

文件：1.40505 Mbytes Page：17 Pages

N-CHANNEL 30 V - 0.012 ??- 8 A PowerFLAT??ULTRA LOW GATE CHARGE STripFET??MOSFET

文件：164.93 Kbytes Page：7 Pages

N-channel 30V - 0.012ohm - 8A - PowerFLAT Ultra low gate charge STripFET Power MOSFET

文件：285.27 Kbytes Page：12 Pages

N-channel 30V - 0.012ohm - 8A - PowerFLAT Ultra low gate charge STripFET Power MOSFET

文件：285.27 Kbytes Page：12 Pages

Switching applications

文件：543.6 Kbytes Page：14 Pages