Automotive-gradeN-channel100V,20mΩtyp.,18A,STripFET™F7PowerMOSFETinaPowerFLAT™5x6package

Features AEC-Q101qualified AmongthelowestRDS(on)onthemarket ExcellentFoM(figureofmerit) LowCrss/CissratioforEMIimmunity Highavalancheruggedness Wettableflankpackage AEC-Q101qualified AmongthelowestRDS(on)onthemarket ExcellentFoM(figureofm

N-ChannelEnhancementModeFieldEffectTransistor

Features LowRDS(on)&FOM Extremelylowswitchingloss ExcellentstabilityanduniformityorInvertors Applications Consumerelectronicpowersupply Motorcontrol Synchronous-rectification IsolatedDC Synchronous-rectificationapplication

N-channel100V,0.0145typ.,45A,STripFETVIIDeepGATEPowerMOSFETsinDPAK,I2PAKandTO-220packages

Description TheseN-channelPowerMOSFETsutilizeSTripFET™F7technologywithanenhancedtrenchgatestructurethatresultsinverylowonstateresistance,whilealsoreducinginternalcapacitanceandgatechargeforfasterandmoreefficientswitching. Features •AmongthelowestRDS(on)on

N-ChannelMOSFETusesadvancedSGTtechnology

文件：1.64749 Mbytes Page：5 Pages

iscN-ChannelMOSFETTransistor

文件：324.57 Kbytes Page：2 Pages

iscN-ChannelMOSFETTransistor

文件：310.95 Kbytes Page：2 Pages

Ultralowon-resistance

文件：820.94 Kbytes Page：13 Pages