N-channel 100 V, 0.0145 Ohm typ., 30 A STripFET F7 Power MOSFET in TO-220FP package

该器件使用ST专有的STripFET™技术的第七代设计规则，具有新的栅极结构。因而，功率MOSFET在不同封装中都能呈现最低的RDS(on)。\n • 超低导通电阻• 经过100％雪崩测试;

Ultra low on-resistance

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isc N-Channel MOSFET Transistor

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N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packages

Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Features • Among the lowest RDS(on) on

Isc N-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on)≤18mΩ • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

丝印代码：DPAK；isc N-Channel MOSFET Transistor

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