型号 功能描述 生产厂家 企业 LOGO 操作

Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficien

STMICROELECTRONICS

意法半导体

Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficien

STMICROELECTRONICS

意法半导体

Low gate input resistance

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

STMICROELECTRONICS

意法半导体

Low gate input resistance

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

STMICROELECTRONICS

意法半导体

Extremely low gate charge

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STMICROELECTRONICS

意法半导体

更新时间:2025-12-16 17:30:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
23+
TO220F
6996
只做原装正品现货
ST/意法
25+
TO22F
32000
ST/意法全新特价STF13N60M2即刻询购立享优惠#长期有货
ST
23+
TO220F
7850
只做原装正品假一赔十为客户做到零风险!!
ST(意法)
24+
TO-220F(TO-220IS)
19048
原厂可订货,技术支持,直接渠道。可签保供合同
ST
25+
TO220F
6000
全新原装现货、诚信经营!
ST
23+
TO220F
9800
正规渠道,只有原装!
ST(意法半导体)
24+
TO-220FPAB-3
7828
支持大陆交货,美金交易。原装现货库存。
ST
2020+
TO220F
11000
全新原装公司现货
ST
24+
TO220F
12000
原装正品 假一罚十
ST
21+
TO220F
22119
十年信誉,只做原装,有挂就有现货!

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