STD13N60M2价格
参考价格：￥5.5526
型号：STD13N60M2 品牌：STMicroelectronics 备注：这里有STD13N60M2多少钱，2026年最近7天走势，今日出价，今日竞价，STD13N60M2批发/采购报价，STD13N60M2行情走势销售排行榜，STD13N60M2报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STD13N60M2 | Extremely low gate charge Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficien | STMICROELECTRONICS 意法半导体 |   | |
STD13N60M2 | N沟道600 V、0.35 Ohm典型值、11 A MDmesh M2功率MOSFET，DPAK封装 These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected; | STMICROELECTRONICS 意法半导体 | | |
Extremely low gate charge Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficien | STMICROELECTRONICS 意法半导体 | | ||
Low gate input resistance Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They | STMICROELECTRONICS 意法半导体 | | ||
丝印代码：13N60M2；N-channel 600 V, 0.35 廓 typ., 11 A MDmesh II Plus??low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They | STMICROELECTRONICS 意法半导体 | | ||
丝印代码：13N60M2；N-channel 600 V, 0.35 廓 typ., 11 A MDmesh II Plus??low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They | STMICROELECTRONICS 意法半导体 | | ||
Extremely low gate charge 文件：674.18 Kbytes Page：12 Pages | STMICROELECTRONICS 意法半导体 | |
STD13N60M2产品属性
- 类型
描述
- Package：
DPAK
- Grade：
Industrial
- VDSS(V)：
600
- RDS(on)_max(@ VGS=10V)(Ω)：
0.38
- Drain Current (Dc)_max(A)：
11
- PTOT_max(W)：
110
- Qg_typ(nC)：
17
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
SANKEN |
25+ |
TO3P-5Pin |
880000 |
明嘉莱只做原装正品现货 |
|||
ST(意法) |
25+ |
DPAK |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
ST |
25+ |
TO-252 |
6000 |
全新原装现货、诚信经营! |
|||
ST/意法 |
2025+ |
TO-252 |
1454 |
原装进口价格优 请找坤融电子! |
|||
ST |
25+ |
TO-252 |
30000 |
只做原装 有挂有货 假一赔十 |
|||
三肯 |
24+ |
TO-3P-5L |
5000 |
全新原装正品,现货销售 |
|||
24+ |
SMD |
93 |
本站现库存 |
||||
三肯 |
22+ |
TO-3P-5L |
20000 |
公司只做原装 品质保障 |
|||
ST |
23+ |
TO252 |
6996 |
只做原装正品现货 |
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