N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT™ (5x6)STripFET™ VI DeepGATE™ Power MOSFET

Features ■RDS(on)*Qgindustrybenchmark ■Extremelylowon-resistanceRDS(on) ■Highavalancheruggedness ■Lowgatedrivepowerlosses ■Verylowswitchinggatecharge Application ■Switchingapplications Description Thisproductutilizesthe6thgenerationofdesign rules

N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT™ (5x6) STripFET™ VII DeepGATE™ Power MOSFET

Features ■RDS(on)*Qgindustrybenchmark ■Extremelylowon-resistanceRDS(on) ■Highavalancheruggedness Application ■Switchingapplications Description Thisdeviceutilizesthe7thgenerationofdesign rulesofST’sproprietarySTripFET™technology, withanewgatestructure.Th

Automotive-grade dual N-channel 40 V, 3.5 mΩ typ., 40 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 DI

Features AEC-Q101qualified AmongthelowestRDS(on)onthemarket ExcellentFoM(figureofmerit) LowCrss/CissratioforEMIimmunity Highavalancheruggedness Wettableflankpackage Applications Switchingapplications Description ThisN-channelPowerMOSFETutilizes

Automotive-grade N-channel 40 V, 3.0 mΩ typ., 105 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

Features AEC-Q101qualified AmongthelowestRDS(on)onthemarket ExcellentFoM(figureofmerit) LowCrss/CissratioforEMIimmunity Highavalancheruggedness Wettableflankpackage Applications Switchingapplications Description ThisN-channelPowerMOSFETutilizes

N-channel 800 V, 0.59 Ω typ., 6 A MDmesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package

Features Industry’slowestRDS(on)xarea Industry’sbestfigureofmerit(FoM) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description ThisveryhighvoltageN-channelPower MOSFETisdesignedusingMDmesh™K5 technolog

N-channel 600 V, 0.580 廓 typ., 5.5 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package

Description ThisdeviceisanN-channelPowerMOSFET developedusinganewgenerationofMDmesh™ technology:MDmeshIIPlus™lowQg.This revolutionaryPowerMOSFETassociatesa verticalstructuretothecompany'sstriplayoutto yieldoneoftheworld'sloweston-resistanceand gatecharge

N-channel 600 V, 550 m typ., 5.5 A, MDmeshTM M6 Power MOSFET in a PowerFLAT™ 5x6 HV package

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Description ThenewMDmesh™M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

N-channel 650 V, 0.85 typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

Features •Extremelylowgatecharge •Excellentoutputcapacitance(COSS)profile •100avalanchetested •Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice

N-channel 100 V, 0.0062 廓 typ., 19 A, STripFET??VII DeepGATE?? Power MOSFET in a PowerFLAT??5x6 package

文件：1.40189 Mbytes Page：16 Pages

N-channel 12 V, 0.0022 25 A PowerFLAT (5x6) STripFET V Power MOSFET

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N-channel 60 V, 3.3 m廓 typ., 25 A STripFET??VI DeepGATE?? Power MOSFET in a PowerFLAT??5x6 package

文件：2.35851 Mbytes Page：15 Pages

High avalanche ruggedness

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N-CHANNEL 30V - 0.0032ohm - 25A PowerFLAT (6x5) STripFET III MOSFET

文件：482.3 Kbytes Page：10 Pages

N-channel 30V - 0.0032ohm - 25A - PowerFLAT (6x5) STripFET III Power MOSFET

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N-channel 30 V - 0.0032 廓 - 25 A - PowerFLAT??(6x5) STripFET??III Power MOSFET

文件：356.13 Kbytes Page：12 Pages

N-channel 30V - 0.0032ohm - 25A - PowerFLAT (6x5) STripFET III Power MOSFET

文件：394.32 Kbytes Page：12 Pages

N-channel 30 V - 0.0032 廓 - 25 A - PowerFLAT??(6x5) STripFET??III Power MOSFET

文件：356.13 Kbytes Page：12 Pages

N-channel 30V - 0.0032廓 - 22A - PowerFLAT??(6x5) STripFET??Power MOSFET plus monolithic Schottky

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Automotive N-channel 80 V, 5.6 m廓 typ., 95 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

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N-channel 30 V, 0.0033 廓 typ., 27 A STripFET??H7 Power MOSFET plus monolithic Schottky in a PowerFLAT??5x6

文件：1.13746 Mbytes Page：16 Pages

Very high switching speed

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封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 230V 1.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

N-channel 150 V, 0.20 Ohm typ., 2.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double island package

文件：1.9005 Mbytes Page：14 Pages

N-channel 30 V, 0.015, 9 A, PowerFLAT 3.3x3.3 STripFET V Power MOSFET

文件：705.85 Kbytes Page：14 Pages