八通道±90 V，±2 A，3级RTZ高速超声波脉冲发生器

The STHV800 is an octal, monolithic, high-voltage and high-speed pulse generator. It is designed for medical ultrasound applications, but can be used for other piezoelectric, capacitive or MEMS transducers.\n\n The device integrates a controller logic interface circuit (compatible with both 1.8 V an • High-density ultrasound transmitter \n• Two independent half-bridges per channel \n• 0 to ±90 V output voltage \n• Power-up free \n• Synchronization of the input signals (selectable) by an external clock \n• Up to 20 MHz operating frequency \n• Low-power, high-voltage, high-speed drivers \n• 2 ind;

Octal 짹90 V, 짹2 A, 3-level RTZ, high-speed ultrasound pulser

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封装/外壳：56-VFLGA 包装：托盘 描述：IC ULTRASOUND PULSER 56TFLGA 集成电路（IC） 专用 IC

Octal 짹90 V, 짹2 A, 3-level RTZ, high-speed ultrasound pulser

文件：314.73 Kbytes Page：5 Pages

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NSC800TM High-Performance Low-Power CMOS Microprocessor

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