位置：首页 > IC中文资料第12918页 > STH18NB40FI
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STH18NB40FI | N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 |   | |
STH18NB40FI | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.26Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 | |
STH18NB40FI产品属性
- 类型
描述
- 型号
STH18NB40FI
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
25+ |
N/A |
18746 |
样件支持,可原厂排单订货! |
|||
STMicroelectronics |
25+ |
N/A |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ST |
23+ |
TO-3PF |
8000 |
专做原装正品,假一罚百! |
|||
ST |
10+ |
BGA |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法 |
10+ |
BGA |
3000 |
||||
ST/意法 |
2450+ |
SOT263 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ST |
24+ |
TO-3P |
2500 |
原装现货热卖 |
|||
ST |
06+ |
TO-247 |
2000 |
原装库存 |
|||
24+ |
N/A |
2540 |
|||||
ST |
17+ |
BGA |
6200 |
100%原装正品现货 |
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STH18NB40FI规格书下载地址
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DdatasheetPDF页码索引
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