位置：首页 > IC中文资料第51页 > STW18NB40
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STW18NB40 | N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 |   | |
STW18NB40 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 18.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.26Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.26Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 | |
STW18NB40产品属性
- 类型
描述
- 型号
STW18NB40
- 功能描述
MOSFET N-Ch 400 Volt 18.4 A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
ST |
20+ |
TO-3P |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
24+ |
TO-247 |
1000 |
原装现货热卖 |
|||
ST |
25+ |
TO-247 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
ST |
25+ |
TO-247 |
18000 |
原厂直接发货进口原装 |
|||
ST |
06+ |
TO-247 |
2380 |
原装库存 |
|||
24+ |
N/A |
2450 |
|||||
ST |
23+ |
TO-3P |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ST |
NEW |
TO-247 |
8795 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ST |
23+ |
TO-247 |
5000 |
原装正品,假一罚十 |
STW18NB40规格书下载地址
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DdatasheetPDF页码索引
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