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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STW18NB40 | N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
STW18NB40 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 18.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.26Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.26Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
STW18NB40产品属性
- 类型
描述
- 型号
STW18NB40
- 功能描述
MOSFET N-Ch 400 Volt 18.4 A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
ST |
20+ |
TO-3P |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
ST品牌 |
2016+ |
TO-247 |
6528 |
房间原装进口现货假一赔十 |
|||
ST |
06+ |
TO-247 |
2380 |
原装库存 |
|||
ST/意法半导体 |
22+ |
TO-247 |
25000 |
只做原装进口现货,专注配单 |
|||
ST |
24+ |
TO-247 |
1000 |
原装现货热卖 |
|||
ST |
TO-247-3 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST |
23+ |
TO-247 |
8795 |
||||
ST |
24+ |
TO-247 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
24+ |
N/A |
2450 |
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STW18NB40规格书下载地址
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STV0299B
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DdatasheetPDF页码索引
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