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型号 功能描述 生产厂家 企业 LOGO 操作
STH18NB40

N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per

STMICROELECTRONICS

意法半导体

N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.26Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per

STMICROELECTRONICS

意法半导体

N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per

STMICROELECTRONICS

意法半导体

N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per

STMICROELECTRONICS

意法半导体

STH18NB40产品属性

  • 类型

    描述

  • 型号

    STH18NB40

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET

更新时间:2026-3-18 10:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
06+
TO-247
2000
原装库存
ST
2023+
BGA
5800
进口原装,现货热卖
ST/意法
25+
BGA
860000
明嘉莱只做原装正品现货
ST/意法半导体
25+
原厂封装
9999
ST
22+
BGA
20000
公司只做原装 品质保障
ST
24+
TO-3PF
5000
只做原装公司现货
24+
N/A
2540
STMicroelectronics
25+
N/A
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
STMicroelectronics
25+
N/A
18746
样件支持,可原厂排单订货!
24+
N/A
74000
一级代理-主营优势-实惠价格-不悔选择

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